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| Presentation | 2010-12-17 11:15 Monte Carlo Simulations of Nanogate In0.7Ga0.3As/InAs/In0.7Ga0.3As Composite Channel HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe (NICT), Takashi Mimura (Fujitsu Labs./NICT)  ED2010-168 Link to ES Tech. Rep. Archives: ED2010-168 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | To achieve high-speed operations of InP-based InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is used as a channel. In this work, we carried out Monte Carlo (MC) simulations of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel HEMTs and examined the effect of the channel structure on the device performance. The InAs layer with a thickness range from 2 to 8 nm was introduced into the In0.7Ga0.3As channel. Even for the InAs layer thickness of 2 nm, a twofold increase in the drain-source current Ids , transconductance gm and cutoff frequency fT was seen. With further increasing the InAs layer thickness, the increase of Ids, gm and fT was not so much. The increase in Ids, gm and fT mainly results from the increase in the electron velocity by introducing the InAs layer into the channel. On the other hand, the increase in the electron density by introducing the InAs layer was small. Furthermore, we fabricated composite channel HEMTs and compared their device performance with those of In0.7Ga0.3As channel HEMTs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | In-based HEMTs / In0.7Ga0.3As/InAs/In0.7Ga0.3As / Composite channel / Monte Carlo simulations / Drain-source current / Transconductance / Cutoff frequency / Electron velocity | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 342, ED2010-168, pp. 59-64, Dec. 2010. | |
| Paper # | ED2010-168 | |
| Date of Issue | 2010-12-09 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-168 Link to ES Tech. Rep. Archives: ED2010-168 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2010-12-16 - 2010-12-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tohoku University (Research Institute of Electrical Communication) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter wave, terahertz devices and systems |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-12-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Monte Carlo Simulations of Nanogate In0.7Ga0.3As/InAs/In0.7Ga0.3As Composite Channel HEMTs |
| Sub Title (in English) | |
| Keyword(1) | In-based HEMTs |
| Keyword(2) | In0.7Ga0.3As/InAs/In0.7Ga0.3As |
| Keyword(3) | Composite channel |
| Keyword(4) | Monte Carlo simulations |
| Keyword(5) | Drain-source current |
| Keyword(6) | Transconductance |
| Keyword(7) | Cutoff frequency |
| Keyword(8) | Electron velocity |
| 1st Author's Name | Akira Endoh |
| 1st Author's Affiliation | National Institute of Information and Communications Technology/Fujitsu Laboratories Ltd. (NICT/Fujitsu Labs.) |
| 2nd Author's Name | Issei Watanabe |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 3rd Author's Name | Takashi Mimura |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd./National Institute of Information and Communications Technology (Fujitsu Labs./NICT) |
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| Speaker | Author-1 |
| Date Time | 2010-12-17 11:15:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2010-168 |
| Volume (vol) | vol.110 |
| Number (no) | no.342 |
| Page | pp.59-64 |
| #Pages | 6 |
| Date of Issue | 2010-12-09 (ED) |
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