講演抄録/キーワード |
講演名 |
2010-12-17 10:10
All-Optical Memory Based on Buried Heterostructure Photonic Crystal Lasers ○Chin-Hui Chen・Shinji Matsuo・Kengo Nozaki・Akihiko Shinya・Tomonari Sato・Yoshihiro Kawaguchi・Hisashi Sumikura・Masaya Notomi(NTT) LQE2010-116 エレソ技報アーカイブへのリンク:LQE2010-116 |
抄録 |
(和) |
We have demonstrated an all-optical memory by using InGaAsP/InP buried heterostructure photonic crystal (BH-PhC) lasers. We achieved distinct optical injection locking bistability with only 25 \muW pump power, which is two orders less than any other type of bistable semiconductor lasers. Dynamic memory operations were achieved with 22 \muW bias power and 60 ps switching time. A wide bistable range both in switching power and injection wavelength was achieved and showed that it is sufficiently robust for practical usage. The InGaAsP/InP BH-PhC laser shows great potentials for realizing logic elements for all-optical signal processing. |
(英) |
We have demonstrated an all-optical memory by using InGaAsP/InP buried heterostructure photonic crystal (BH-PhC) lasers. We achieved distinct optical injection locking bistability with only 25 \muW pump power, which is two orders less than any other type of bistable semiconductor lasers. Dynamic memory operations were achieved with 22 \muW bias power and 60 ps switching time. A wide bistable range both in switching power and injection wavelength was achieved and showed that it is sufficiently robust for practical usage. The InGaAsP/InP BH-PhC laser shows great potentials for realizing logic elements for all-optical signal processing. |
キーワード |
(和) |
/ / / / / / / |
(英) |
photonic crystal laser / bistable / all-optical memory / injection-locking / / / / |
文献情報 |
信学技報, vol. 110, no. 353, LQE2010-116, pp. 9-12, 2010年12月. |
資料番号 |
LQE2010-116 |
発行日 |
2010-12-10 (LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
LQE2010-116 エレソ技報アーカイブへのリンク:LQE2010-116 |