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Paper Abstract and Keywords
Presentation 2010-12-17 17:30
The characteristics of GaInAsP wired waveguide on Si substrate with BCB bonding
Yasuna Maeda, Jieun Lee, Yuki Atsumi, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech) Link to ES Tech. Rep. Archives: OPE2010-141
Abstract (in Japanese) (See Japanese page) 
(in English) To overcome LSI performance limitation due to the global electrical wiring of LSIs, the realization of the ultra-low-power consumption and compact photonic integrated circuits on LSI are expected. We have proposed membrane structure with 150 nm thick III-V semiconductor wire for the waveguides which is sandwiched between low refractive index materials for this purpose. We have established BCB bonding techniques and succeeded in a bonding of 2 inch diameter Si and GaInAsP/InP wafers without air voids. By using this BCB bonding technique, the TE mode propagation loss of 17 dB/cm was obtained with 150-nm thick and 460-nm-wide GaInAsP/InP waveguides bonded on Si substrates.
Keyword (in Japanese) (See Japanese page) 
(in English) BCB Bonding / GaInAsP wired waveguide / High optical confinement / Si Photonics / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 352, OPE2010-141, pp. 55-60, Dec. 2010.
Paper # OPE2010-141 
Date of Issue 2010-12-10 (OPE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Conference Information
Committee OPE  
Conference Date 2010-12-17 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OPE 
Conference Code 2010-12-OPE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) The characteristics of GaInAsP wired waveguide on Si substrate with BCB bonding 
Sub Title (in English)  
Keyword(1) BCB Bonding  
Keyword(2) GaInAsP wired waveguide  
Keyword(3) High optical confinement  
Keyword(4) Si Photonics  
1st Author's Name Yasuna Maeda  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Jieun Lee  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Yuki Atsumi  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
4th Author's Name Nobuhiko Nishiyama  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
5th Author's Name Shigehisa Arai  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
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Date Time 2010-12-17 17:30:00 
Presentation Time 25 
Registration for OPE 
Paper # IEICE-OPE2010-141 
Volume (vol) IEICE-110 
Number (no) no.352 
Page pp.55-60 
#Pages IEICE-6 
Date of Issue IEICE-OPE-2010-12-10 

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