Paper Abstract and Keywords |
Presentation |
2010-12-17 17:30
The characteristics of GaInAsP wired waveguide on Si substrate with BCB bonding Yasuna Maeda, Jieun Lee, Yuki Atsumi, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech) OPE2010-141 Link to ES Tech. Rep. Archives: OPE2010-141 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
To overcome LSI performance limitation due to the global electrical wiring of LSIs, the realization of the ultra-low-power consumption and compact photonic integrated circuits on LSI are expected. We have proposed membrane structure with 150 nm thick III-V semiconductor wire for the waveguides which is sandwiched between low refractive index materials for this purpose. We have established BCB bonding techniques and succeeded in a bonding of 2 inch diameter Si and GaInAsP/InP wafers without air voids. By using this BCB bonding technique, the TE mode propagation loss of 17 dB/cm was obtained with 150-nm thick and 460-nm-wide GaInAsP/InP waveguides bonded on Si substrates. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
BCB Bonding / GaInAsP wired waveguide / High optical confinement / Si Photonics / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 352, OPE2010-141, pp. 55-60, Dec. 2010. |
Paper # |
OPE2010-141 |
Date of Issue |
2010-12-10 (OPE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
OPE2010-141 Link to ES Tech. Rep. Archives: OPE2010-141 |
Conference Information |
Committee |
OPE |
Conference Date |
2010-12-17 - 2010-12-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
OPE |
Conference Code |
2010-12-OPE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
The characteristics of GaInAsP wired waveguide on Si substrate with BCB bonding |
Sub Title (in English) |
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Keyword(1) |
BCB Bonding |
Keyword(2) |
GaInAsP wired waveguide |
Keyword(3) |
High optical confinement |
Keyword(4) |
Si Photonics |
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1st Author's Name |
Yasuna Maeda |
1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
2nd Author's Name |
Jieun Lee |
2nd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
3rd Author's Name |
Yuki Atsumi |
3rd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
4th Author's Name |
Nobuhiko Nishiyama |
4th Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
5th Author's Name |
Shigehisa Arai |
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Tokyo Institute of Technology (Tokyo Tech) |
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Speaker |
Author-1 |
Date Time |
2010-12-17 17:30:00 |
Presentation Time |
25 minutes |
Registration for |
OPE |
Paper # |
OPE2010-141 |
Volume (vol) |
vol.110 |
Number (no) |
no.352 |
Page |
pp.55-60 |
#Pages |
6 |
Date of Issue |
2010-12-10 (OPE) |