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| Presentation | 2010-12-17 11:20 Laser Doping at Room Temperature in Multi-Crystalline Silicon Solar Cell Process Mitsuhiro Hasegawa, Kenji Hirata, Tamaki Takayama, Tomohiro Funatani, Takashi Fuyuki (NAIST)  SDM2010-189 Link to ES Tech. Rep. Archives: SDM2010-189 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In the fabrication of silicon solar cells process, laser doping (LD) technique is recently gathering many attentions because of its advantages such as be operated at room temperature and in the atmosphere. In this study, we tried to apply laser doping method for the emitter formation in multi-crystalline silicon solar cell. As the result, enough photovoltaic properties were achieved by illuminated I-V measurements. In addition, evaluation by EL imaging technique was verified that LD technique can be applied to fabricate multi-crystalline silicon solar cells. Furthermore, by laser irradiation, it has been clarified that cavity is formed on silicon surface. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Multi-crystalline Silicon / Solar Cell / aser Doping / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 351, SDM2010-189, pp. 25-28, Dec. 2010. | |
| Paper # | SDM2010-189 | |
| Date of Issue | 2010-12-10 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2010-189 Link to ES Tech. Rep. Archives: SDM2010-189 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2010-12-17 - 2010-12-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto Univ. (Katsura) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Characterization of Si and Si-related Materials |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Laser Doping at Room Temperature in Multi-Crystalline Silicon Solar Cell Process |
| Sub Title (in English) | |
| Keyword(1) | Multi-crystalline Silicon |
| Keyword(2) | Solar Cell |
| Keyword(3) | aser Doping |
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| 1st Author's Name | Mitsuhiro Hasegawa |
| 1st Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 2nd Author's Name | Kenji Hirata |
| 2nd Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 3rd Author's Name | Tamaki Takayama |
| 3rd Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 4th Author's Name | Tomohiro Funatani |
| 4th Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 5th Author's Name | Takashi Fuyuki |
| 5th Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
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| Speaker | Author-1 |
| Date Time | 2010-12-17 11:20:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2010-189 |
| Volume (vol) | vol.110 |
| Number (no) | no.351 |
| Page | pp.25-28 |
| #Pages | 4 |
| Date of Issue | 2010-12-10 (SDM) |
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