講演抄録/キーワード |
講演名 |
2010-12-16 16:50
ナノサイズFETによる室温コヒーレント・電圧制御テラヘルツ波発振 ○ステファン ボウバンガ-トムベット・佐藤 昭(東北大)・ヴィクトー ル リズィー(会津大)・尾辻泰一(東北大) ED2010-164 エレソ技報アーカイブへのリンク:ED2010-164 |
抄録 |
(和) |
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent TeraHertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase of the carriers’ density and drift velocity. |
(英) |
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent TeraHertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase of the carriers’ density and drift velocity. |
キーワード |
(和) |
terahertz / emission / plasma wave / / / / / |
(英) |
terahertz / emission / plasma wave / / / / / |
文献情報 |
信学技報, vol. 110, no. 342, ED2010-164, pp. 35-39, 2010年12月. |
資料番号 |
ED2010-164 |
発行日 |
2010-12-09 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2010-164 エレソ技報アーカイブへのリンク:ED2010-164 |