Paper Abstract and Keywords |
Presentation |
2010-12-16 14:10
Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada (Tokyo Tech), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-159 Link to ES Tech. Rep. Archives: ED2010-159 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We fabricated terahertz oscillators using GaInAs/AlAs double-barrier resonant tunneling diodes with graded emitters on InP substrate, and estimated the transit time across the collector depletion region from oscillation characteristics in 0.6-1 THz range. It was found that the graded emitter structure was effective for reduction of the transit time. This result was in good agreement with a simple theoretical analysis, and attributed to reduction of the transition between $\gamma$ and L bands due to low electric field in the collector depletion region. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
resonant tunneling diodes / terahertz oscillator / graded emitter / collector transit time / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 342, ED2010-159, pp. 7-12, Dec. 2010. |
Paper # |
ED2010-159 |
Date of Issue |
2010-12-09 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2010-159 Link to ES Tech. Rep. Archives: ED2010-159 |