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| Presentation | 2010-12-16 14:10 Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada (Tokyo Tech), Hiroki Sugiyama, Haruki Yokoyama (NTT)  ED2010-159 Link to ES Tech. Rep. Archives: ED2010-159 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We fabricated terahertz oscillators using GaInAs/AlAs double-barrier resonant tunneling diodes with graded emitters on InP substrate, and estimated the transit time across the collector depletion region from oscillation characteristics in 0.6-1 THz range. It was found that the graded emitter structure was effective for reduction of the transit time. This result was in good agreement with a simple theoretical analysis, and attributed to reduction of the transition between $\gamma$ and L bands due to low electric field in the collector depletion region. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | resonant tunneling diodes / terahertz oscillator / graded emitter / collector transit time / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 342, ED2010-159, pp. 7-12, Dec. 2010. | |
| Paper # | ED2010-159 | |
| Date of Issue | 2010-12-09 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-159 Link to ES Tech. Rep. Archives: ED2010-159 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2010-12-16 - 2010-12-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tohoku University (Research Institute of Electrical Communication) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter wave, terahertz devices and systems |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-12-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators |
| Sub Title (in English) | |
| Keyword(1) | resonant tunneling diodes |
| Keyword(2) | terahertz oscillator |
| Keyword(3) | graded emitter |
| Keyword(4) | collector transit time |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Atsushi Teranishi |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 2nd Author's Name | Safumi Suzuki |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 3rd Author's Name | Kaoru Shizuno |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 4th Author's Name | Masahiro Asada |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 5th Author's Name | Hiroki Sugiyama |
| 5th Author's Affiliation | NTT Photonics Laboratories (NTT) |
| 6th Author's Name | Haruki Yokoyama |
| 6th Author's Affiliation | NTT Photonics Laboratories (NTT) |
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| Speaker | Author-1 |
| Date Time | 2010-12-16 14:10:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2010-159 |
| Volume (vol) | vol.110 |
| Number (no) | no.342 |
| Page | pp.7-12 |
| #Pages | 6 |
| Date of Issue | 2010-12-09 (ED) |
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