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| Presentation | 2010-11-12 14:15 Modeling of 2D Bias Control in Overlap Region of High-Voltage MOSFETs Akihiro Tanaka, Yasunori Oritsuki, Hideyuki Kikuchihara, Masataka Miyake, Hans Juergen Mattausch, Mitiko Miura-Mattausch (Hiroshima Univ.), Yong Liu, Keith Green (TI)  SDM2010-181 Link to ES Tech. Rep. Archives: SDM2010-181 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | High-voltage MOSFETs have been applied in a wide range of bias voltages from a few volts up to several hundred volts by optimizing the combined structure of MOSFET and drift region at its drain side. To realize high predictive circuit simulations for any structural variations, physically accurate compact resistor model has been developed by considering the resistive drift region explicitly, which features a complicated 2-dimensional (2D) bias-dependent current flow. The developed compact resistor model enables reproduction of the I-V characteristics for a wide range of structure variations with a small number of only 6 fitting parameters. The reported quasi-2D resistor model will be implemented in the 2nd generation HiSIM-HV compact models for high-voltage MOSFETs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | HV-MOSFET / compact model / resister model / overlap region / 2D effect / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 274, SDM2010-181, pp. 53-57, Nov. 2010. | |
| Paper # | SDM2010-181 | |
| Date of Issue | 2010-11-04 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2010-181 Link to ES Tech. Rep. Archives: SDM2010-181 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2010-11-11 - 2010-11-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit Simulations, etc |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Modeling of 2D Bias Control in Overlap Region of High-Voltage MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | HV-MOSFET |
| Keyword(2) | compact model |
| Keyword(3) | resister model |
| Keyword(4) | overlap region |
| Keyword(5) | 2D effect |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Akihiro Tanaka |
| 1st Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 2nd Author's Name | Yasunori Oritsuki |
| 2nd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 3rd Author's Name | Hideyuki Kikuchihara |
| 3rd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 4th Author's Name | Masataka Miyake |
| 4th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 5th Author's Name | Hans Juergen Mattausch |
| 5th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 6th Author's Name | Mitiko Miura-Mattausch |
| 6th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 7th Author's Name | Yong Liu |
| 7th Author's Affiliation | Texas Instruments (TI) |
| 8th Author's Name | Keith Green |
| 8th Author's Affiliation | Texas Instruments (TI) |
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| Speaker | Author-1 |
| Date Time | 2010-11-12 14:15:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2010-181 |
| Volume (vol) | vol.110 |
| Number (no) | no.274 |
| Page | pp.53-57 |
| #Pages | 5 |
| Date of Issue | 2010-11-04 (SDM) |
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