| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2010-11-12 10:00 Characterization of insulated gates on GaN and AlGaN/GaN structures Yujin Hori, Naohisa Harada, Chihoko Mizue, Tamotsu Hashizume (Hokkaido Univ.)  ED2010-154 CPM2010-120 LQE2010-110 Link to ES Tech. Rep. Archives: ED2010-154 CPM2010-120 LQE2010-110 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We investigated the interface and electrical properties of insulated gates fabricated on GaN and AlGaN/GaN structures using atomic layer deposited Al2O3 and electrochemical oxide films. The annealing process at 800 oC brought a large number of microcrystallization regions into the Al2O3 layer, causing a marked leakage in the current-voltage characteristics of the Al2O3/n-GaN structure. The “ohmic-first” process with a SiN protection layer suppressed leakage current and realized low electronic state densities at the Al2O3/n-GaN interface. The electrochemical oxidation process was applied to AlGaN/GaN HEMT structure. The formation of the recessed oxide gate structure realized a low gate leakage current and a normally-off operation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN / GaN / Al2O3 / MOS / normally-off / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 271, ED2010-154, pp. 55-58, Nov. 2010. | |
| Paper # | ED2010-154 | |
| Date of Issue | 2010-11-04 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-154 CPM2010-120 LQE2010-110 Link to ES Tech. Rep. Archives: ED2010-154 CPM2010-120 LQE2010-110 |
|
| Conference Information | |
| Committee | CPM LQE ED |
| Conference Date | 2010-11-11 - 2010-11-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-11-CPM-LQE-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of insulated gates on GaN and AlGaN/GaN structures |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | Al2O3 |
| Keyword(4) | MOS |
| Keyword(5) | normally-off |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yujin Hori |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Naohisa Harada |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 3rd Author's Name | Chihoko Mizue |
| 3rd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 4th Author's Name | Tamotsu Hashizume |
| 4th Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 5th Author's Name | |
| 5th Author's Affiliation | () |
| 6th Author's Name | |
| 6th Author's Affiliation | () |
| 7th Author's Name | |
| 7th Author's Affiliation | () |
| 8th Author's Name | |
| 8th Author's Affiliation | () |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2010-11-12 10:00:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2010-154, CPM2010-120, LQE2010-110 |
| Volume (vol) | vol.110 |
| Number (no) | no.271(ED), no.272(CPM), no.273(LQE) |
| Page | pp.55-58 |
| #Pages | 4 |
| Date of Issue | 2010-11-04 (ED, CPM, LQE) |
[Return to Top Page]