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Paper Abstract and Keywords
Presentation 2010-11-12 10:50
Vertical GaN Diode on GaN Free-Standing Substrate
Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.) ED2010-156 CPM2010-122 LQE2010-112 Link to ES Tech. Rep. Archives: ED2010-156 CPM2010-122 LQE2010-112
Abstract (in Japanese) (See Japanese page) 
(in English) We report the fabrication of schottky barrier diode (SBD) on GaN free-standing substrate. SBDs showed good DC operating characteristics. The breakdown voltage and the specific on-resistance ($R_{on}$A) of the SBD without field plate structure on GaN free-standing substrate were 546 V and 2 $\Omega$$cm^{2}$, respectively. SBDs on GaN free-standing substrate were hardly influenced by the current collapse.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / SBD / GaN free-standing substrate / Current collapse / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 273, LQE2010-112, pp. 63-66, Nov. 2010.
Paper # LQE2010-112 
Date of Issue 2010-11-04 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-156 CPM2010-122 LQE2010-112 Link to ES Tech. Rep. Archives: ED2010-156 CPM2010-122 LQE2010-112

Conference Information
Committee CPM LQE ED  
Conference Date 2010-11-11 - 2010-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2010-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Vertical GaN Diode on GaN Free-Standing Substrate 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) SBD  
Keyword(3) GaN free-standing substrate  
Keyword(4) Current collapse  
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1st Author's Name Shuichi Yagi  
1st Author's Affiliation POWDEC K. K. (POWDEC)
2nd Author's Name Shoko Hirata  
2nd Author's Affiliation POWDEC K. K. (POWDEC)
3rd Author's Name Yasunobu Sumida  
3rd Author's Affiliation POWDEC K. K. (POWDEC)
4th Author's Name Masahiro Bessho  
4th Author's Affiliation POWDEC K. K. (POWDEC)
5th Author's Name Hiroji Kawai  
5th Author's Affiliation POWDEC K. K. (POWDEC)
6th Author's Name Toshiharu Matsueda  
6th Author's Affiliation Furukawa Company Limited (Furukawa Co., Ltd.)
7th Author's Name Akira Usui  
7th Author's Affiliation Furukawa Company Limited (Furukawa Co., Ltd.)
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Speaker
Date Time 2010-11-12 10:50:00 
Presentation Time 25 
Registration for LQE 
Paper # IEICE-ED2010-156,IEICE-CPM2010-122,IEICE-LQE2010-112 
Volume (vol) IEICE-110 
Number (no) no.271(ED), no.272(CPM), no.273(LQE) 
Page pp.63-66 
#Pages IEICE-4 
Date of Issue IEICE-ED-2010-11-04,IEICE-CPM-2010-11-04,IEICE-LQE-2010-11-04 


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