| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2010-11-12 15:05 Strain Dependence of Hole Currents in Silicon Nanowire FETs Hideki Minari (Osaka Univ./JST-CREST), Tatsuro Kitayama, Masahiro Yamamoto (Osaka Univ.), Nobuya Mori (Osaka Univ./JST-CREST)  SDM2010-183 Link to ES Tech. Rep. Archives: SDM2010-183 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Hole transport simulation based on the nonequilibrium Green's function and tight-binding formalism has been performed for strained Si nanowire FETs with a diameter of 1.5 nm and 2.5 nm. Simulation results show that for Si nanowire FETs with a diameter of 2.5 nm, the compressive strain enhances the ballistic hole current, while the tensile strain gives opposite results. For Si nanowire FETs with a diameter of 1.5 nm, the ballistic hole current hardly depends on the strain magnitude. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | silicon / nanowire / strain / nonequilibrium Green's function method / tight-binding approximation / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 274, SDM2010-183, pp. 65-69, Nov. 2010. | |
| Paper # | SDM2010-183 | |
| Date of Issue | 2010-11-04 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2010-183 Link to ES Tech. Rep. Archives: SDM2010-183 |
|
| Conference Information | |
| Committee | SDM |
| Conference Date | 2010-11-11 - 2010-11-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit Simulations, etc |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Strain Dependence of Hole Currents in Silicon Nanowire FETs |
| Sub Title (in English) | |
| Keyword(1) | silicon |
| Keyword(2) | nanowire |
| Keyword(3) | strain |
| Keyword(4) | nonequilibrium Green's function method |
| Keyword(5) | tight-binding approximation |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hideki Minari |
| 1st Author's Affiliation | Osaka University/JST-CREST (Osaka Univ./JST-CREST) |
| 2nd Author's Name | Tatsuro Kitayama |
| 2nd Author's Affiliation | Osaka University (Osaka Univ.) |
| 3rd Author's Name | Masahiro Yamamoto |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Nobuya Mori |
| 4th Author's Affiliation | Osaka University/JST-CREST (Osaka Univ./JST-CREST) |
| 5th Author's Name | |
| 5th Author's Affiliation | () |
| 6th Author's Name | |
| 6th Author's Affiliation | () |
| 7th Author's Name | |
| 7th Author's Affiliation | () |
| 8th Author's Name | |
| 8th Author's Affiliation | () |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2010-11-12 15:05:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2010-183 |
| Volume (vol) | vol.110 |
| Number (no) | no.274 |
| Page | pp.65-69 |
| #Pages | 5 |
| Date of Issue | 2010-11-04 (SDM) |
[Return to Top Page]