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| Presentation | 2010-11-11 11:15 Growth characteristics of GaNP layer and InAs-based QDs on Si substrate Satoru Tanabe, Rei Nishio, Yoshitaka Kobayashi, Kosuke Nemoto, Tomoyuki Miyamoto (Tokyo Inst. of Tech.)  ED2010-145 CPM2010-111 LQE2010-101 Link to ES Tech. Rep. Archives: ED2010-145 CPM2010-111 LQE2010-101 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this report, we investigate the basic property of the GaNP layer and the InAs-based quantum dots grown on Si substrate. In the GaNP layer growth on the Si substrate, two step growth method and strain GaInP buffer layer was introduced to suppress the 3D growth and decrease the surface roughness. Moreover, we investigated the the growth temperature dependency, the InAs supply dependency, and the nitrogen composition in the GaNP buffer layer dependency to clarify the InAs formation characteristic. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si / GaNP / InAs / Quantum dots / MOCVD / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 273, LQE2010-101, pp. 15-19, Nov. 2010. | |
| Paper # | LQE2010-101 | |
| Date of Issue | 2010-11-04 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-145 CPM2010-111 LQE2010-101 Link to ES Tech. Rep. Archives: ED2010-145 CPM2010-111 LQE2010-101 |
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| Conference Information | |
| Committee | CPM LQE ED |
| Conference Date | 2010-11-11 - 2010-11-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2010-11-CPM-LQE-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth characteristics of GaNP layer and InAs-based QDs on Si substrate |
| Sub Title (in English) | |
| Keyword(1) | Si |
| Keyword(2) | GaNP |
| Keyword(3) | InAs |
| Keyword(4) | Quantum dots |
| Keyword(5) | MOCVD |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Satoru Tanabe |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 2nd Author's Name | Rei Nishio |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 3rd Author's Name | Yoshitaka Kobayashi |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 4th Author's Name | Kosuke Nemoto |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 5th Author's Name | Tomoyuki Miyamoto |
| 5th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2010-11-11 11:15:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2010-145, CPM2010-111, LQE2010-101 |
| Volume (vol) | vol.110 |
| Number (no) | no.271(ED), no.272(CPM), no.273(LQE) |
| Page | pp.15-19 |
| #Pages | 5 |
| Date of Issue | 2010-11-04 (ED, CPM, LQE) |
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