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Paper Abstract and Keywords
Presentation 2010-11-11 14:40
[Invited Talk] Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks
Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175 Link to ES Tech. Rep. Archives: SDM2010-175
Abstract (in Japanese) (See Japanese page) 
(in English) Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high temperature source/drain activation annealing for either poly-Si or metal gate. This effective work function change, called Fermi level pinning, is considered to be due to an interface dipole formation at high-k/ electrode interface originating from oxygen vacancy ($V_{\rm O}$) generated in high-k layer. In this work, we experimentally verified that an energy gain of electron transfer from $V_{\rm O}$ defect level in high-k to electrode and reductant elements in high-k/metal gate stacks such as carbon an silicon atoms dominate $V_{\rm O}$ formation kinetics, and developed a guiding principle for gate-first high-k/metal gate stacks to control the effective work function.
Keyword (in Japanese) (See Japanese page) 
(in English) High-k Gate Dielectrics / Metal Gate / Work Function / Oxygen Vacancy / Interface Dipole / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 274, SDM2010-175, pp. 23-28, Nov. 2010.
Paper # SDM2010-175 
Date of Issue 2010-11-04 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF SDM2010-175 Link to ES Tech. Rep. Archives: SDM2010-175

Conference Information
Committee SDM  
Conference Date 2010-11-11 - 2010-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulations, etc 
Paper Information
Registration To SDM 
Conference Code 2010-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks 
Sub Title (in English)  
Keyword(1) High-k Gate Dielectrics  
Keyword(2) Metal Gate  
Keyword(3) Work Function  
Keyword(4) Oxygen Vacancy  
Keyword(5) Interface Dipole  
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Keyword(7)  
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1st Author's Name Takuji Hosoi  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Masayuki Saeki  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Yuki Kita  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Yudai Oku  
4th Author's Affiliation Osaka University (Osaka Univ.)
5th Author's Name Hiroaki Arimura  
5th Author's Affiliation Osaka University (Osaka Univ.)
6th Author's Name Naomu Kitano  
6th Author's Affiliation Osaka University (Osaka Univ.)
7th Author's Name Kenji Shiraishi  
7th Author's Affiliation University of Tsukuba (Univ. Tsukuba)
8th Author's Name Keisaku Yamada  
8th Author's Affiliation University of Tsukuba (Univ. Tsukuba)
9th Author's Name Takayoshi Shimura  
9th Author's Affiliation Osaka University (Osaka Univ.)
10th Author's Name Heiji Watanabe  
10th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker
Date Time 2010-11-11 14:40:00 
Presentation Time 50 
Registration for SDM 
Paper # IEICE-SDM2010-175 
Volume (vol) IEICE-110 
Number (no) no.274 
Page pp.23-28 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2010-11-04 


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