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| Presentation | 2010-11-11 15:45 High Efficiency AlInN Ultraviolet Photodiodes on AlN Template Yusuke Sakai, Junki Ichikawa, Takashi Egawa (Nagoya Inst. of Tech.)  ED2010-151 CPM2010-117 LQE2010-107 Link to ES Tech. Rep. Archives: ED2010-151 CPM2010-117 LQE2010-107 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We characterize AlInN/GaN structures on AlN templates grown by metal organic chemical vapor deposition and demonstrate Schottky AlInN ultraviolet photodiodes. AlInN growth parameters were investigated, resulting in AlInN/GaN structures with both smooth interface and good surface morphology. Moreover, compared to AlInN/GaN structures on sapphires, those on AlN templates are found to have better structural properties. Fabricated photodiodes on AlN templates show the good responsivity, corresponding to more than 10 % as quantum efficiency. This value is higher than that of photodiodes on sapphires. Optimized AlInN/GaN structure on AlN template is a promising candidate for realizing high-efficiency ultraviolet photodiode. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlInN / Photodiode / AlN template / MOCVD / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 273, LQE2010-107, pp. 41-45, Nov. 2010. | |
| Paper # | LQE2010-107 | |
| Date of Issue | 2010-11-04 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-151 CPM2010-117 LQE2010-107 Link to ES Tech. Rep. Archives: ED2010-151 CPM2010-117 LQE2010-107 |
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| Conference Information | |
| Committee | CPM LQE ED |
| Conference Date | 2010-11-11 - 2010-11-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2010-11-CPM-LQE-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Efficiency AlInN Ultraviolet Photodiodes on AlN Template |
| Sub Title (in English) | |
| Keyword(1) | AlInN |
| Keyword(2) | Photodiode |
| Keyword(3) | AlN template |
| Keyword(4) | MOCVD |
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| 1st Author's Name | Yusuke Sakai |
| 1st Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 2nd Author's Name | Junki Ichikawa |
| 2nd Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2010-11-11 15:45:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2010-151, CPM2010-117, LQE2010-107 |
| Volume (vol) | vol.110 |
| Number (no) | no.271(ED), no.272(CPM), no.273(LQE) |
| Page | pp.41-45 |
| #Pages | 5 |
| Date of Issue | 2010-11-04 (ED, CPM, LQE) |
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