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Presentation 2010-11-11 13:50
Fabrication and characterization of Si-doped AlGaN for deep-ultraviolet light-source by EB excitation
Yuki Shimahara, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HPK)
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Conference Information
Committee CPM LQE ED  
Conference Date 2010-11-11 - 2010-11-12 
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Paper Information
Registration To LQE 
Conference Code 2010-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication and characterization of Si-doped AlGaN for deep-ultraviolet light-source by EB excitation 
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1st Author's Name Yuki Shimahara  
1st Author's Affiliation Mie University (Mie Univ.)
2nd Author's Name Hideto Miyake  
2nd Author's Affiliation Mie University (Mie Univ.)
3rd Author's Name Kazumasa Hiramatsu  
3rd Author's Affiliation Mie University (Mie Univ.)
4th Author's Name Fumitsugu Fukuyo  
4th Author's Affiliation HAMAMATSU PHOTONICS K.K. (HPK)
5th Author's Name Tomoyuki Okada  
5th Author's Affiliation HAMAMATSU PHOTONICS K.K. (HPK)
6th Author's Name Hidetsugu Takaoka  
6th Author's Affiliation HAMAMATSU PHOTONICS K.K. (HPK)
7th Author's Name Harumasa Yoshida  
7th Author's Affiliation HAMAMATSU PHOTONICS K.K. (HPK)
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Date Time 2010-11-11 13:50:00 
Presentation Time 25 minutes 
Registration for LQE 
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Volume (vol) vol.110 
Number (no) no.271(ED), no.272(CPM), no.273(LQE) 
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