Paper Abstract and Keywords |
Presentation |
2010-11-11 16:25
Current control of AlGaN/GaN HEMT with multi-mesa nanochannels Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2010-152 CPM2010-118 LQE2010-108 Link to ES Tech. Rep. Archives: ED2010-152 CPM2010-118 LQE2010-108 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench, the MMC HEMT has parallel mesa-shaped channels with two-dimensional electron gas (2DEG) surrounded by the gate electrode. The MMC HEMT exhibited a steeper IDS-VDS curve in linear region and a higher transconductance than the planar HEMT, in spite of the fact that the effective gate width of the MMC device is about half of that for the planar device. The MMC HEMT shows excellent current stability in saturation region. From the result of current collapse measurement, the influence of current collapse was weak for the MMC structure because the MMC structure is rather insensitive to change in the access resistance due to high impedance channel. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / AlGaN / High Eletron Mobility Transistor (HEMT) / Multi-Mesa-Channel (MMC) structure / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 271, ED2010-152, pp. 47-50, Nov. 2010. |
Paper # |
ED2010-152 |
Date of Issue |
2010-11-04 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2010-152 CPM2010-118 LQE2010-108 Link to ES Tech. Rep. Archives: ED2010-152 CPM2010-118 LQE2010-108 |
Conference Information |
Committee |
CPM LQE ED |
Conference Date |
2010-11-11 - 2010-11-12 |
Place (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
ED |
Conference Code |
2010-11-CPM-LQE-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Current control of AlGaN/GaN HEMT with multi-mesa nanochannels |
Sub Title (in English) |
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Keyword(1) |
GaN |
Keyword(2) |
AlGaN |
Keyword(3) |
High Eletron Mobility Transistor (HEMT) |
Keyword(4) |
Multi-Mesa-Channel (MMC) structure |
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1st Author's Name |
Kota Ohi |
1st Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
2nd Author's Name |
Tamotsu Hashizume |
2nd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
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Speaker |
Author-1 |
Date Time |
2010-11-11 16:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2010-152, CPM2010-118, LQE2010-108 |
Volume (vol) |
vol.110 |
Number (no) |
no.271(ED), no.272(CPM), no.273(LQE) |
Page |
pp.47-50 |
#Pages |
4 |
Date of Issue |
2010-11-04 (ED, CPM, LQE) |
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