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Paper Abstract and Keywords
Presentation 2010-11-11 16:25
Current control of AlGaN/GaN HEMT with multi-mesa nanochannels
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2010-152 CPM2010-118 LQE2010-108 Link to ES Tech. Rep. Archives: ED2010-152 CPM2010-118 LQE2010-108
Abstract (in Japanese) (See Japanese page) 
(in English) We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench, the MMC HEMT has parallel mesa-shaped channels with two-dimensional electron gas (2DEG) surrounded by the gate electrode. The MMC HEMT exhibited a steeper IDS-VDS curve in linear region and a higher transconductance than the planar HEMT, in spite of the fact that the effective gate width of the MMC device is about half of that for the planar device. The MMC HEMT shows excellent current stability in saturation region. From the result of current collapse measurement, the influence of current collapse was weak for the MMC structure because the MMC structure is rather insensitive to change in the access resistance due to high impedance channel.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / AlGaN / High Eletron Mobility Transistor (HEMT) / Multi-Mesa-Channel (MMC) structure / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 271, ED2010-152, pp. 47-50, Nov. 2010.
Paper # ED2010-152 
Date of Issue 2010-11-04 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-152 CPM2010-118 LQE2010-108 Link to ES Tech. Rep. Archives: ED2010-152 CPM2010-118 LQE2010-108

Conference Information
Committee CPM LQE ED  
Conference Date 2010-11-11 - 2010-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English)  
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Paper Information
Registration To ED 
Conference Code 2010-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Current control of AlGaN/GaN HEMT with multi-mesa nanochannels 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) AlGaN  
Keyword(3) High Eletron Mobility Transistor (HEMT)  
Keyword(4) Multi-Mesa-Channel (MMC) structure  
1st Author's Name Kota Ohi  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Tamotsu Hashizume  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Date Time 2010-11-11 16:25:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2010-152,IEICE-CPM2010-118,IEICE-LQE2010-108 
Volume (vol) IEICE-110 
Number (no) no.271(ED), no.272(CPM), no.273(LQE) 
Page pp.47-50 
#Pages IEICE-4 
Date of Issue IEICE-ED-2010-11-04,IEICE-CPM-2010-11-04,IEICE-LQE-2010-11-04 

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