Paper Abstract and Keywords |
Presentation |
2010-10-29 10:35
Properties analysis of chalcopyrite semiconductor AgGaSe2 by optical measurement Akira Nagaoka, Kenji Yoshino (Univ of Miyazaki) OCS2010-75 OPE2010-111 LQE2010-84 Link to ES Tech. Rep. Archives: OPE2010-111 LQE2010-84 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Ternary chalcopyrite semiconductors have instructive properties that Si and Ge does not have, because of multi element-system. Especially, Because of band-gap energy 1.8 eV, large nonlinear coefficient, high infrared transition and large absorption coefficient 105 cm-1, AgGaSe2 is promised to optoelectronic applications. In this paper, defects level and resistivity, which is one of the important terms of semiconductor properties, were evaluated. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Chalcopyrite semiconductor / Hot-press method / AgGaSe2 / Photoluminescence(PL) / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 258, OPE2010-111, pp. 117-120, Oct. 2010. |
Paper # |
OPE2010-111 |
Date of Issue |
2010-10-21 (OCS, OPE, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
OCS2010-75 OPE2010-111 LQE2010-84 Link to ES Tech. Rep. Archives: OPE2010-111 LQE2010-84 |
Conference Information |
Committee |
LQE OPE OCS |
Conference Date |
2010-10-28 - 2010-10-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Mojiko Retro Town, Minato house |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Ultrafast transmission,signal processing/modulation-demodulation/wideband amplification,WDM technology/light emitting-receiving device/high power light delivery/etc(report on ECOC) |
Paper Information |
Registration To |
OPE |
Conference Code |
2010-10-LQE-OPE-OCS |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Properties analysis of chalcopyrite semiconductor AgGaSe2 by optical measurement |
Sub Title (in English) |
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Keyword(1) |
Chalcopyrite semiconductor |
Keyword(2) |
Hot-press method |
Keyword(3) |
AgGaSe2 |
Keyword(4) |
Photoluminescence(PL) |
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1st Author's Name |
Akira Nagaoka |
1st Author's Affiliation |
University of Miyazaki (Univ of Miyazaki) |
2nd Author's Name |
Kenji Yoshino |
2nd Author's Affiliation |
University of Miyazaki (Univ of Miyazaki) |
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Speaker |
Author-2 |
Date Time |
2010-10-29 10:35:00 |
Presentation Time |
25 minutes |
Registration for |
OPE |
Paper # |
OCS2010-75, OPE2010-111, LQE2010-84 |
Volume (vol) |
vol.110 |
Number (no) |
no.257(OCS), no.258(OPE), no.259(LQE) |
Page |
pp.117-120 |
#Pages |
4 |
Date of Issue |
2010-10-21 (OCS, OPE, LQE) |
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