Paper Abstract and Keywords |
Presentation |
2010-10-29 10:25
Optimization of GaN film growth condition using pulse-mode hot-mesh CVD Kazuki Nagata, Souichi Satomoto (Nagaoka Univ. Technol.), Hironori Katagiri, Kazuo Jimbo (Nagaoka Techni. College), Maki Suemitsu, Tetsuo Endoh, Takashi Ito (Tohoku Univ. Technol.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2010-102 Link to ES Tech. Rep. Archives: CPM2010-102 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Hot-mesh CVD with pulse-mode gas supply has been investigated to improve the crystallinity and optical properties of gallium nitride (GaN) epitaxial films. Thus, GaN films of good crystallinity have been grown on Si substrates using an intermittent gas supply of TMG at an interruption time of 8 s and a continuous supply of NH3 gas. In order to further improve the film quality, the present study aimed to optimize the quantity of the intermittent TMG gas supply. Although the growth of a few monolayers per pulse was achieved by lowering the TMG gas pressure, the optimal growth conditions needed to improve the crystallinity and optical properties could not be obtained. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / hot-mesh CVD / pulse-mode gas supply / X-ray diffraction pattern / photoluminescence / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 261, CPM2010-102, pp. 55-58, Oct. 2010. |
Paper # |
CPM2010-102 |
Date of Issue |
2010-10-21 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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CPM2010-102 Link to ES Tech. Rep. Archives: CPM2010-102 |
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