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Paper Abstract and Keywords
Presentation 2010-10-29 10:25
Optimization of GaN film growth condition using pulse-mode hot-mesh CVD
Kazuki Nagata, Souichi Satomoto (Nagaoka Univ. Technol.), Hironori Katagiri, Kazuo Jimbo (Nagaoka Techni. College), Maki Suemitsu, Tetsuo Endoh, Takashi Ito (Tohoku Univ. Technol.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2010-102 Link to ES Tech. Rep. Archives: CPM2010-102
Abstract (in Japanese) (See Japanese page) 
(in English) Hot-mesh CVD with pulse-mode gas supply has been investigated to improve the crystallinity and optical properties of gallium nitride (GaN) epitaxial films. Thus, GaN films of good crystallinity have been grown on Si substrates using an intermittent gas supply of TMG at an interruption time of 8 s and a continuous supply of NH3 gas. In order to further improve the film quality, the present study aimed to optimize the quantity of the intermittent TMG gas supply. Although the growth of a few monolayers per pulse was achieved by lowering the TMG gas pressure, the optimal growth conditions needed to improve the crystallinity and optical properties could not be obtained.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / hot-mesh CVD / pulse-mode gas supply / X-ray diffraction pattern / photoluminescence / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 261, CPM2010-102, pp. 55-58, Oct. 2010.
Paper # CPM2010-102 
Date of Issue 2010-10-21 (CPM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2010-102 Link to ES Tech. Rep. Archives: CPM2010-102

Conference Information
Committee CPM  
Conference Date 2010-10-28 - 2010-10-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2010-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Optimization of GaN film growth condition using pulse-mode hot-mesh CVD 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) hot-mesh CVD  
Keyword(3) pulse-mode gas supply  
Keyword(4) X-ray diffraction pattern  
Keyword(5) photoluminescence  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kazuki Nagata  
1st Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Technol.)
2nd Author's Name Souichi Satomoto  
2nd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Technol.)
3rd Author's Name Hironori Katagiri  
3rd Author's Affiliation Nagaoka Technivcal College (Nagaoka Techni. College)
4th Author's Name Kazuo Jimbo  
4th Author's Affiliation Nagaoka Technivcal College (Nagaoka Techni. College)
5th Author's Name Maki Suemitsu  
5th Author's Affiliation Touhoku University (Tohoku Univ. Technol.)
6th Author's Name Tetsuo Endoh  
6th Author's Affiliation Tohoku University (Tohoku Univ. Technol.)
7th Author's Name Takashi Ito  
7th Author's Affiliation Touhoku University (Tohoku Univ. Technol.)
8th Author's Name Hideki Nakazawa  
8th Author's Affiliation Hirosaki University (Hirosaki Univ.)
9th Author's Name Yuzuru Narita  
9th Author's Affiliation Yamagata University (Yamagata Univ.)
10th Author's Name Kanji Yasui  
10th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Technol.)
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Speaker 10 
Date Time 2010-10-29 10:25:00 
Presentation Time 25 
Registration for CPM 
Paper # IEICE-CPM2010-102 
Volume (vol) IEICE-110 
Number (no) no.261 
Page pp.55-58 
#Pages IEICE-4 
Date of Issue IEICE-CPM-2010-10-21 


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