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Paper Abstract and Keywords
Presentation 2010-10-26 09:55
Frequency characteristics of Vacuum Transistor using Hafunium Nitride Field Emitter Array
Keita Ikeda, Wataru Ohue, Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.) ED2010-137 Link to ES Tech. Rep. Archives: ED2010-137
Abstract (in Japanese) (See Japanese page) 
(in English) Vacuum transistors using field emitter array have been developed for a signal amplifier. We fabricated a gated 40,000-tip hafnium nitride field emitter array (HfN-FEA) and evaluated HfN-FEA as an active device. The vacuum transistor had a triode structure with a gated HfN-FEA and a collector electrode. The device exhibited a collector current of 1.1 mA, transconductance of 0.27 mS, collector resistance of 2.8 MΩ, and voltage amplification factor of 750 at the applying emitter voltage of -58 V. The vacuum transistor amplified ac signal, and voltage gain of 29 dB was obtained with a load resistance of 100 kΩ. The gain bandwidth product of 1 MHz was obtained. From the estimation of the equivalent circuit, gain bandwidth product of 36 MHz is expected with the vacuum transistor.
Keyword (in Japanese) (See Japanese page) 
(in English) hafnium nitride / field emitter array / amplifier / vacuum transistor / frequency characteristics / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 249, ED2010-137, pp. 47-50, Oct. 2010.
Paper # ED2010-137 
Date of Issue 2010-10-18 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-137 Link to ES Tech. Rep. Archives: ED2010-137

Conference Information
Committee ED  
Conference Date 2010-10-25 - 2010-10-26 
Place (in Japanese) (See Japanese page) 
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Paper Information
Registration To ED 
Conference Code 2010-10-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Frequency characteristics of Vacuum Transistor using Hafunium Nitride Field Emitter Array 
Sub Title (in English)  
Keyword(1) hafnium nitride  
Keyword(2) field emitter array  
Keyword(3) amplifier  
Keyword(4) vacuum transistor  
Keyword(5) frequency characteristics  
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1st Author's Name Keita Ikeda  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Wataru Ohue  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Yasuhito Gotoh  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Hiroshi Tsuji  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2010-10-26 09:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-137 
Volume (vol) vol.110 
Number (no) no.249 
Page pp.47-50 
#Pages
Date of Issue 2010-10-18 (ED) 


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