Paper Abstract and Keywords |
Presentation |
2010-10-26 09:55
Frequency characteristics of Vacuum Transistor using Hafunium Nitride Field Emitter Array Keita Ikeda, Wataru Ohue, Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.) ED2010-137 Link to ES Tech. Rep. Archives: ED2010-137 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Vacuum transistors using field emitter array have been developed for a signal amplifier. We fabricated a gated 40,000-tip hafnium nitride field emitter array (HfN-FEA) and evaluated HfN-FEA as an active device. The vacuum transistor had a triode structure with a gated HfN-FEA and a collector electrode. The device exhibited a collector current of 1.1 mA, transconductance of 0.27 mS, collector resistance of 2.8 MΩ, and voltage amplification factor of 750 at the applying emitter voltage of -58 V. The vacuum transistor amplified ac signal, and voltage gain of 29 dB was obtained with a load resistance of 100 kΩ. The gain bandwidth product of 1 MHz was obtained. From the estimation of the equivalent circuit, gain bandwidth product of 36 MHz is expected with the vacuum transistor. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
hafnium nitride / field emitter array / amplifier / vacuum transistor / frequency characteristics / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 249, ED2010-137, pp. 47-50, Oct. 2010. |
Paper # |
ED2010-137 |
Date of Issue |
2010-10-18 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2010-137 Link to ES Tech. Rep. Archives: ED2010-137 |
Conference Information |
Committee |
ED |
Conference Date |
2010-10-25 - 2010-10-26 |
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(See Japanese page) |
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Paper Information |
Registration To |
ED |
Conference Code |
2010-10-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Frequency characteristics of Vacuum Transistor using Hafunium Nitride Field Emitter Array |
Sub Title (in English) |
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Keyword(1) |
hafnium nitride |
Keyword(2) |
field emitter array |
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amplifier |
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vacuum transistor |
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frequency characteristics |
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1st Author's Name |
Keita Ikeda |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Wataru Ohue |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Yasuhito Gotoh |
3rd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
4th Author's Name |
Hiroshi Tsuji |
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Kyoto University (Kyoto Univ.) |
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Speaker |
Author-1 |
Date Time |
2010-10-26 09:55:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2010-137 |
Volume (vol) |
vol.110 |
Number (no) |
no.249 |
Page |
pp.47-50 |
#Pages |
4 |
Date of Issue |
2010-10-18 (ED) |
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