Paper Abstract and Keywords |
Presentation |
2010-10-25 13:25
Surface state and electron emission property of silicon field emitter arrays treated by trifluoromethane plasma Yasuhito Gotoh, Keisuke Endo, Hiroshi Tsuji (Kyoto Univ.), Junzo Ishikawa (Chubu Univ.), Shigeki Sakai (Nissin Ion Equipment) ED2010-129 Link to ES Tech. Rep. Archives: ED2010-129 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Surface state of the silicon substrate treated by trifluoromethane plasma was analyzed in order to clarify the origin of the variation of electron emission property of silicon field emitter array treated by the same process. In order to simulate the emitting surface in long time operation, the samples were heated in vacuum. Evaluation of interatomic bonding was made by x-ray photoelectron spectroscopy, and evaluation of work function was made by Kelvin probe. As a result, it was found that fluorine atoms were lost from the fluorocarbon layer that covered the sample surface just after the plasma treatment. Work function of the plasma treated surface was higher than that of silicon, and it decreased after thermal treatment. The above result shows good agreement with the conclusion derived from the alanysis of field emission property. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
silicon field emitter array / surface state / electron emission property / trifluoromethane plasma treatment / work function / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 249, ED2010-129, pp. 7-10, Oct. 2010. |
Paper # |
ED2010-129 |
Date of Issue |
2010-10-18 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2010-129 Link to ES Tech. Rep. Archives: ED2010-129 |
Conference Information |
Committee |
ED |
Conference Date |
2010-10-25 - 2010-10-26 |
Place (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
ED |
Conference Code |
2010-10-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Surface state and electron emission property of silicon field emitter arrays treated by trifluoromethane plasma |
Sub Title (in English) |
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Keyword(1) |
silicon field emitter array |
Keyword(2) |
surface state |
Keyword(3) |
electron emission property |
Keyword(4) |
trifluoromethane plasma treatment |
Keyword(5) |
work function |
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1st Author's Name |
Yasuhito Gotoh |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Keisuke Endo |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Hiroshi Tsuji |
3rd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
4th Author's Name |
Junzo Ishikawa |
4th Author's Affiliation |
Chubu University (Chubu Univ.) |
5th Author's Name |
Shigeki Sakai |
5th Author's Affiliation |
Nissin Ion Equipment Co., Ltd. (Nissin Ion Equipment) |
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Speaker |
Author-1 |
Date Time |
2010-10-25 13:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2010-129 |
Volume (vol) |
vol.110 |
Number (no) |
no.249 |
Page |
pp.7-10 |
#Pages |
4 |
Date of Issue |
2010-10-18 (ED) |
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