IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2010-10-25 13:25
Surface state and electron emission property of silicon field emitter arrays treated by trifluoromethane plasma
Yasuhito Gotoh, Keisuke Endo, Hiroshi Tsuji (Kyoto Univ.), Junzo Ishikawa (Chubu Univ.), Shigeki Sakai (Nissin Ion Equipment) ED2010-129 Link to ES Tech. Rep. Archives: ED2010-129
Abstract (in Japanese) (See Japanese page) 
(in English) Surface state of the silicon substrate treated by trifluoromethane plasma was analyzed in order to clarify the origin of the variation of electron emission property of silicon field emitter array treated by the same process. In order to simulate the emitting surface in long time operation, the samples were heated in vacuum. Evaluation of interatomic bonding was made by x-ray photoelectron spectroscopy, and evaluation of work function was made by Kelvin probe. As a result, it was found that fluorine atoms were lost from the fluorocarbon layer that covered the sample surface just after the plasma treatment. Work function of the plasma treated surface was higher than that of silicon, and it decreased after thermal treatment. The above result shows good agreement with the conclusion derived from the alanysis of field emission property.
Keyword (in Japanese) (See Japanese page) 
(in English) silicon field emitter array / surface state / electron emission property / trifluoromethane plasma treatment / work function / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 249, ED2010-129, pp. 7-10, Oct. 2010.
Paper # ED2010-129 
Date of Issue 2010-10-18 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-129 Link to ES Tech. Rep. Archives: ED2010-129

Conference Information
Committee ED  
Conference Date 2010-10-25 - 2010-10-26 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2010-10-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Surface state and electron emission property of silicon field emitter arrays treated by trifluoromethane plasma 
Sub Title (in English)  
Keyword(1) silicon field emitter array  
Keyword(2) surface state  
Keyword(3) electron emission property  
Keyword(4) trifluoromethane plasma treatment  
Keyword(5) work function  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yasuhito Gotoh  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Keisuke Endo  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Hiroshi Tsuji  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Junzo Ishikawa  
4th Author's Affiliation Chubu University (Chubu Univ.)
5th Author's Name Shigeki Sakai  
5th Author's Affiliation Nissin Ion Equipment Co., Ltd. (Nissin Ion Equipment)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2010-10-25 13:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-129 
Volume (vol) vol.110 
Number (no) no.249 
Page pp.7-10 
#Pages
Date of Issue 2010-10-18 (ED) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan