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| Presentation | 2010-10-25 13:00 FEA fabrication using thin film bending technology Tomoya Yoshida, Masayoshi Nagao, Takashi Nishi, Hisashi Ohsaki, Takashi Shimizu, Seigo Kanemaru (AIST)  ED2010-128 Link to ES Tech. Rep. Archives: ED2010-128 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A simple field emitter array (FEA) fabrication process based on ion-induced bending (IIB) technology was developed. Using IIB technology, only 20-nm-thick thin film is necessary to form an emitter tip of 1 micrometer in height. This FEA fabrication process does not require any specialized equipments, and the condition of the ion irradiation for IIB is equal to the ion doping process of the general thin-film transistor (TFT) fabrication. And we demonstrated the fabrication of the FEA integration with TFT. The FEA fabrication process using the IIB technology would therefore be compatible with standard TFT fabrication processes and could produce large-area FEA applications. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | ion beam irradiation / thin film / stress relaxation / large-area FEA / FED / X-ray imaging device / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 249, ED2010-128, pp. 1-6, Oct. 2010. | |
| Paper # | ED2010-128 | |
| Date of Issue | 2010-10-18 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-128 Link to ES Tech. Rep. Archives: ED2010-128 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2010-10-25 - 2010-10-26 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-10-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | FEA fabrication using thin film bending technology |
| Sub Title (in English) | |
| Keyword(1) | ion beam irradiation |
| Keyword(2) | thin film |
| Keyword(3) | stress relaxation |
| Keyword(4) | large-area FEA |
| Keyword(5) | FED |
| Keyword(6) | X-ray imaging device |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tomoya Yoshida |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 2nd Author's Name | Masayoshi Nagao |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Takashi Nishi |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 4th Author's Name | Hisashi Ohsaki |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 5th Author's Name | Takashi Shimizu |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 6th Author's Name | Seigo Kanemaru |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
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| Speaker | Author-1 |
| Date Time | 2010-10-25 13:00:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2010-128 |
| Volume (vol) | vol.110 |
| Number (no) | no.249 |
| Page | pp.1-6 |
| #Pages | 6 |
| Date of Issue | 2010-10-18 (ED) |
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