Paper Abstract and Keywords |
Presentation |
2010-10-25 13:50
Field Emission Properties of Nitrogen-doped Diamond Related with C-N Bond Yuki Kudo (Univ. of Tsukuba/ICU), Tomoaki Masuzawa, Yusuke Sato (ICU), Ichitaro Saito (Univ. of Cambridge), Takatoshi Yamada (AIST), Angel Koh, Daniel. Chua (National Univ. of Singapore), Teruo Yoshino, W. J. Chun (ICU), Satoshi Yamasaki (AIST/Univ. of Tsukuba), Ken Okano (ICU) ED2010-130 Link to ES Tech. Rep. Archives: ED2010-130 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Electron field emission measurement and Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) were carried out on nitrogen (N-) doped diamond films of two different impurity sources; urea and dimethylurea. Urea doped diamond films exhibited the strongest signal intensity of C-N bonds according to the TOF-SIMS results. As for the field emission properties, the enhancement factor  was characterised not only by Fowler-Nordheim (F-N) plot, but also by V-d plot where the voltage required for a certain value of emission current to flow was plotted against each anode-cathode distance. The largest  was acquired from the diamond film with the most C-N counts, and therefore more C-N maybe the key to enhancing electron field emission from N-doped diamond. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
nitrogen-doped diamond / dimethylurea / urea / field emission / enhancement factor / TOF-SIMS / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 249, ED2010-130, pp. 11-15, Oct. 2010. |
Paper # |
ED2010-130 |
Date of Issue |
2010-10-18 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2010-130 Link to ES Tech. Rep. Archives: ED2010-130 |