Paper Abstract and Keywords |
Presentation |
2010-10-22 10:30
Theoretical Study on Carrier Transfer in Si/SiC Quantum Dot Solar Cells Sho Hirose, Itaru Yamashita, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2010-161 Link to ES Tech. Rep. Archives: SDM2010-161 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Quantum dot solar cells are expected as high-efficiency solar cells. However, reported efficiencies are lower than the half of the ideal value. To improve the efficiency, optimization of the cell structure is necessary. Particularly, in Si/SiC type solar cells, Si/SiC interface defects are a big problem. In this study, we investigated the effect of the interface defects on electronic structure and carrier transfer. Moreover, we also researched the effect of type of SiC crystal structure on them. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Quantum Dot Solar Cells / SiC / Carrier Transfer / Quantum Chemical Calculation / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 241, SDM2010-161, pp. 39-40, Oct. 2010. |
Paper # |
SDM2010-161 |
Date of Issue |
2010-10-14 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2010-161 Link to ES Tech. Rep. Archives: SDM2010-161 |
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