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| Presentation | 2010-10-22 14:50 Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI)  SDM2010-167 Link to ES Tech. Rep. Archives: SDM2010-167 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The chemical and electronic-band structures of SiO2/Si interfaces formed utilizing oxygen radicals were investigated by measuring angle-resolved photoelectron spectra arising from Si 2p and O 1s core levels and a valence band with the same probing depth. We clarified that 1) the SiO2/Si interfaces formed exhibited an almost abrupt compositional transition, 2) the valence band offsets at the Si(111)/Si, Si(110)/Si, and Si(551)/Si interfaces are almost the same and are 0.07 eV smaller than that at the SiO2/Si(100) interface. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | photoelectron spectra / SiO2/Si interface / compositional transition layer / radical oxidation / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 241, SDM2010-167, pp. 61-65, Oct. 2010. | |
| Paper # | SDM2010-167 | |
| Date of Issue | 2010-10-14 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2010-167 Link to ES Tech. Rep. Archives: SDM2010-167 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2010-10-21 - 2010-10-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tohoku University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Semiconductor process science and new technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals |
| Sub Title (in English) | |
| Keyword(1) | photoelectron spectra |
| Keyword(2) | SiO2/Si interface |
| Keyword(3) | compositional transition layer |
| Keyword(4) | radical oxidation |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tomoyuki Suwa |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Yuki Kumagai |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Akinobu Teramoto |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Tadahiro Ohmi |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Takeo Hattori |
| 5th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 6th Author's Name | Toyohiko Kinoshita |
| 6th Author's Affiliation | Japan Synchrotron Radiation Research Institute (JASRI) |
| 7th Author's Name | Takayuki Muro |
| 7th Author's Affiliation | Japan Synchrotron Radiation Research Institute (JASRI) |
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| Speaker | Author-1 |
| Date Time | 2010-10-22 14:50:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2010-167 |
| Volume (vol) | vol.110 |
| Number (no) | no.241 |
| Page | pp.61-65 |
| #Pages | 5 |
| Date of Issue | 2010-10-14 (SDM) |
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