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Paper Abstract and Keywords
Presentation 2010-10-22 16:30
Carrier conduction and crystal structure of organic Mott insulator (BEDT-TTF)(TCNQ)
Masato Ishiguro, Yuya Ito, Tomoki Takahara, Mitsutoshi Hanada, Masatoshi Sakai, Masakazu Nakamura, Kazuhiro Kudo (Chiba Univ.) OME2010-54 Link to ES Tech. Rep. Archives: OME2010-54
Abstract (in Japanese) (See Japanese page) 
(in English) Organic Mott insulator (BEDT-TTF)(TCNQ) is a charge transfer complex composed of bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) and 7,7,8,8-tetracyanoquinodimethane (TCNQ), which shows metal-insulator transition at 330 K. Temperature dependence of the field effect transistor (FET) characteristics was investigated for (BEDT-TTF)(TCNQ) crystalline FET. Abrupt increase of the field effect electron and hole mobility at 285 K, ferroelectric-like polarization below 285 K, and nonlinear conduction below 230 K were observed, which had not been observed in the bulk crystal. These experimental results indicate the existence of the charge ordered state in the (BEDT-TTF)(TCNQ) surface. In addition, The temperature dependence of the (BEDT-TTF)(TCNQ) crystal structure was investigated to clarify relations with the observed carrier conduction.
Keyword (in Japanese) (See Japanese page) 
(in English) Field effect transistor / Charge transfer complex / Mott insulator / Charge order / Ferroelectricity / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 243, OME2010-54, pp. 41-45, Oct. 2010.
Paper # OME2010-54 
Date of Issue 2010-10-15 (OME) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OME2010-54 Link to ES Tech. Rep. Archives: OME2010-54

Conference Information
Committee OME  
Conference Date 2010-10-22 - 2010-10-22 
Place (in Japanese) (See Japanese page) 
Place (in English) NTT Musashino R&D Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Organic Devices, etc 
Paper Information
Registration To OME 
Conference Code 2010-10-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Carrier conduction and crystal structure of organic Mott insulator (BEDT-TTF)(TCNQ) 
Sub Title (in English)  
Keyword(1) Field effect transistor  
Keyword(2) Charge transfer complex  
Keyword(3) Mott insulator  
Keyword(4) Charge order  
Keyword(5) Ferroelectricity  
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1st Author's Name Masato Ishiguro  
1st Author's Affiliation Chiba University (Chiba Univ.)
2nd Author's Name Yuya Ito  
2nd Author's Affiliation Chiba University (Chiba Univ.)
3rd Author's Name Tomoki Takahara  
3rd Author's Affiliation Chiba University (Chiba Univ.)
4th Author's Name Mitsutoshi Hanada  
4th Author's Affiliation Chiba University (Chiba Univ.)
5th Author's Name Masatoshi Sakai  
5th Author's Affiliation Chiba University (Chiba Univ.)
6th Author's Name Masakazu Nakamura  
6th Author's Affiliation Chiba University (Chiba Univ.)
7th Author's Name Kazuhiro Kudo  
7th Author's Affiliation Chiba University (Chiba Univ.)
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Speaker
Date Time 2010-10-22 16:30:00 
Presentation Time 25 
Registration for OME 
Paper # IEICE-OME2010-54 
Volume (vol) IEICE-110 
Number (no) no.243 
Page pp.41-45 
#Pages IEICE-5 
Date of Issue IEICE-OME-2010-10-15 


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