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Presentation 2010-09-09 13:55
Proposal of distortion reduction method for the GaN HEMT Doherty Power Amplifier with a Series Connected Load
Satoshi Kawai, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2010-67 Link to ES Tech. Rep. Archives: MW2010-67
Abstract (in Japanese) (See Japanese page) 
(in English) Recently, much attention has been given to Doherty amplifiers as microwave power amplifiers that have the possibility of realizing high power efficiency and low-distortion characteristics with a wide dynamic range. Doherty introduced two types of concepts for high-efficiency linear amplifiers in 1936. One has a shunt connected load and the other has a series connected load. We proposed the microwave Doherty amplifier with a series connected load and fabricated a 1.9 GHz GaN HEMT Doherty power amplifier using baluns [5]-[7]. The amplifier realized high power efficiency with a wide dynamic range in comparison with a conventional push-pull amplifier. In this paper, we propose distortion reduction method for the Doherty amplifier with a series connected load and achieved reduction of the third-order intermodulation distortion more than 15 dB at the output power from 5 to 20 dBm. The amplifier realized power added-efficiency (PAE) of 31 % at the output power of 24 dBm at 10 dB input backoff from the saturated output power of 31 dBm with PAE of 58 % and a third-order intermodulation distortion of lower than –35 dBc at output backoff of lower than 14 dB from the saturated output power of 31 dBm.
Keyword (in Japanese) (See Japanese page) 
(in English) Doherty amplifier / series connected load type / microwave amplifiers / GaN HEMT / balun / third-order intermodulation distortion / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 197, MW2010-67, pp. 7-12, Sept. 2010.
Paper # MW2010-67 
Date of Issue 2010-09-02 (MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MW2010-67 Link to ES Tech. Rep. Archives: MW2010-67

Conference Information
Committee MW  
Conference Date 2010-09-09 - 2010-09-10 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Inst. of Tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To MW 
Conference Code 2010-09-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Proposal of distortion reduction method for the GaN HEMT Doherty Power Amplifier with a Series Connected Load 
Sub Title (in English)  
Keyword(1) Doherty amplifier  
Keyword(2) series connected load type  
Keyword(3) microwave amplifiers  
Keyword(4) GaN HEMT  
Keyword(5) balun  
Keyword(6) third-order intermodulation distortion  
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Keyword(8)  
1st Author's Name Satoshi Kawai  
1st Author's Affiliation The University of Electro-Communications (UEC)
2nd Author's Name Yoichiro Takayama  
2nd Author's Affiliation The University of Electro-Communications (UEC)
3rd Author's Name Ryo Ishikawa  
3rd Author's Affiliation The University of Electro-Communications (UEC)
4th Author's Name Kazuhiko Honjo  
4th Author's Affiliation The University of Electro-Communications (UEC)
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Speaker Author-1 
Date Time 2010-09-09 13:55:00 
Presentation Time 20 minutes 
Registration for MW 
Paper # MW2010-67 
Volume (vol) vol.110 
Number (no) no.197 
Page pp.7-12 
#Pages
Date of Issue 2010-09-02 (MW) 


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