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| Presentation | 2010-08-27 16:25 On the Gate-Stack Origin Threshold Voltage Variability in Scaled FinFETs and Multi-FinFETs Yongxun Liu, Kazuhiko Endo, Shinich Ouchi (AIST), Takahiro Kamei (Meiji Univ.), Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa (AIST), Tetsuro Hayashida (Meiji Univ.), Kunihiro Sakamoto, Takashi Matsukawa (AIST), Atsushi Ogura (Meiji Univ.), Meishoku Masahara (AIST)  SDM2010-151 ICD2010-66 Link to ES Tech. Rep. Archives: SDM2010-151 ICD2010-66 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The threshold voltage (Vt) variability in scaled FinFETs with gate length down to 20 nm was systematically investigated. It was found that the atomically flat Si-fin sidewall channels fabricated by using the orientation dependent wet etching are very effective to reduce the gate-stack origin Vt variations (VTV). By investigating the gate oxide thickness (Tox) dependence of VTV, the gate-stack origin, i.e., work function variation (WFV) and gate oxide charge (Qox) variation (OCV) origin VTV were successfully separated. Moreover, it was experimentally found that the Vt of the scaled P-channel PVD-TiN gate multi-FinFETs with the same gate area reduces with increasing the number of fins. Keyword FinFET，Threshold Voltage, Variability |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | FinFET / Threshold Voltage / Variability / Gate work function / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 182, SDM2010-151, pp. 149-154, Aug. 2010. | |
| Paper # | SDM2010-151 | |
| Date of Issue | 2010-08-19 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2010-151 ICD2010-66 Link to ES Tech. Rep. Archives: SDM2010-151 ICD2010-66 |
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| Conference Information | |
| Committee | ICD SDM |
| Conference Date | 2010-08-26 - 2010-08-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Sapporo Center for Gender Equality |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Low voltage/low power techniques, novel devices, circuits, and applications |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-08-ICD-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | On the Gate-Stack Origin Threshold Voltage Variability in Scaled FinFETs and Multi-FinFETs |
| Sub Title (in English) | |
| Keyword(1) | FinFET |
| Keyword(2) | Threshold Voltage |
| Keyword(3) | Variability |
| Keyword(4) | Gate work function |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yongxun Liu |
| 1st Author's Affiliation | National Institute of AIST (AIST) |
| 2nd Author's Name | Kazuhiko Endo |
| 2nd Author's Affiliation | National Institute of AIST (AIST) |
| 3rd Author's Name | Shinich Ouchi |
| 3rd Author's Affiliation | National Institute of AIST (AIST) |
| 4th Author's Name | Takahiro Kamei |
| 4th Author's Affiliation | Meiji University (Meiji Univ.) |
| 5th Author's Name | Junichi Tsukada |
| 5th Author's Affiliation | National Institute of AIST (AIST) |
| 6th Author's Name | Hiromi Yamauchi |
| 6th Author's Affiliation | National Institute of AIST (AIST) |
| 7th Author's Name | Yuki Ishikawa |
| 7th Author's Affiliation | National Institute of AIST (AIST) |
| 8th Author's Name | Tetsuro Hayashida |
| 8th Author's Affiliation | Meiji University (Meiji Univ.) |
| 9th Author's Name | Kunihiro Sakamoto |
| 9th Author's Affiliation | National Institute of AIST (AIST) |
| 10th Author's Name | Takashi Matsukawa |
| 10th Author's Affiliation | National Institute of AIST (AIST) |
| 11th Author's Name | Atsushi Ogura |
| 11th Author's Affiliation | Meiji University (Meiji Univ.) |
| 12th Author's Name | Meishoku Masahara |
| 12th Author's Affiliation | National Institute of AIST (AIST) |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
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| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2010-08-27 16:25:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2010-151, ICD2010-66 |
| Volume (vol) | vol.110 |
| Number (no) | no.182(SDM), no.183(ICD) |
| Page | pp.149-154 |
| #Pages | 6 |
| Date of Issue | 2010-08-19 (SDM, ICD) |
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