Paper Abstract and Keywords |
Presentation |
2010-08-27 14:35
Application of spin MOSFET to Nonvolatile and Reconfigurable LSIs Tomoaki Inokuchi, Takao Marukame, Tetsufumi Tanamoto, Hideyuki Sugiyama, Mizue Ishikawa, Yoshiaki Saito (Toshiba Corporation) SDM2010-147 ICD2010-62 Link to ES Tech. Rep. Archives: SDM2010-147 ICD2010-62 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We developed a novel spintronic device “Spin-transfer-Torque Switching-MOSFET (STS-MOSFET)” and demonstrated its reconfigurable characteristics for nonvolatile LSIs. The device showed clear magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. Optimum connection configuration was revailed in order to enhance the read and write characteristics (i.e., MC ratio and write voltage) of the STS-MOSFETs. Large scale circuit simulations for various FPGA circuits revealed that the critical path delay is significantly improved by using the STS-MOSFETs. The overall properties of the STS-MOSFETs show great potentialities for future reconfigurable integrated circuits based on CMOS technology. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Spin MOSFET / Nonvolatile logic / Spin-transfer-Torque-Switching / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 182, SDM2010-147, pp. 125-129, Aug. 2010. |
Paper # |
SDM2010-147 |
Date of Issue |
2010-08-19 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2010-147 ICD2010-62 Link to ES Tech. Rep. Archives: SDM2010-147 ICD2010-62 |
Conference Information |
Committee |
ICD SDM |
Conference Date |
2010-08-26 - 2010-08-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Sapporo Center for Gender Equality |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Low voltage/low power techniques, novel devices, circuits, and applications |
Paper Information |
Registration To |
SDM |
Conference Code |
2010-08-ICD-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Application of spin MOSFET to Nonvolatile and Reconfigurable LSIs |
Sub Title (in English) |
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Keyword(1) |
Spin MOSFET |
Keyword(2) |
Nonvolatile logic |
Keyword(3) |
Spin-transfer-Torque-Switching |
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1st Author's Name |
Tomoaki Inokuchi |
1st Author's Affiliation |
Toshiba Corporation (Toshiba Corporation) |
2nd Author's Name |
Takao Marukame |
2nd Author's Affiliation |
Toshiba Corporation (Toshiba Corporation) |
3rd Author's Name |
Tetsufumi Tanamoto |
3rd Author's Affiliation |
Toshiba Corporation (Toshiba Corporation) |
4th Author's Name |
Hideyuki Sugiyama |
4th Author's Affiliation |
Toshiba Corporation (Toshiba Corporation) |
5th Author's Name |
Mizue Ishikawa |
5th Author's Affiliation |
Toshiba Corporation (Toshiba Corporation) |
6th Author's Name |
Yoshiaki Saito |
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Toshiba Corporation (Toshiba Corporation) |
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Speaker |
Author-1 |
Date Time |
2010-08-27 14:35:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2010-147, ICD2010-62 |
Volume (vol) |
vol.110 |
Number (no) |
no.182(SDM), no.183(ICD) |
Page |
pp.125-129 |
#Pages |
5 |
Date of Issue |
2010-08-19 (SDM, ICD) |
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