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| Presentation | 2010-07-02 10:00 Acivation behaviour for doped Si films after laser or furnace annealing Takashi Noguchi, Toshiharu Suzuki (Univ. of Ryukyus)  ED2010-85 SDM2010-86 Link to ES Tech. Rep. Archives: ED2010-85 SDM2010-86 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | After excimer laser annealing (ELA) for heavily boron- or phosphorous-doped Si films, the relation between the conductivity and the crystallinity was studied compared with the result after furnace annealing (FA). The sheet resistance decreased with improving the crystallinity of the films. By optimizing the laser annealing condition, the Si films of 50 nm thickness show extremely low sheet resistance below 90 ohm/□ for phosphorus dose of 2e15 cm-2 and for boron dose of 5e15 cm-2. The effective activation rate for the doped Si film after ELA is comparable to the result for bulk single-crystalline Si under thermal equilibrium condition. ELA activation subsequently after heavily ion implantation is more effective than FA and is expected to source and drain or Si gate in CMOS TFTs as well as an electrode for pin sensor diode and for solar cell as a System on Panel (SoP) application. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | polysilicon film / crystallization / laser annealing / sheet resistance / electrical activation / mobility / grain boundary / thin film transistor | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 110, SDM2010-86, pp. 149-153, June 2010. | |
| Paper # | SDM2010-86 | |
| Date of Issue | 2010-06-23 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-85 SDM2010-86 Link to ES Tech. Rep. Archives: ED2010-85 SDM2010-86 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2010-06-30 - 2010-07-02 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo Inst. of Tech. Ookayama Campus |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-06-ED-SDM |
| Language | English (Japanese title is available) |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Acivation behaviour for doped Si films after laser or furnace annealing |
| Sub Title (in English) | |
| Keyword(1) | polysilicon film |
| Keyword(2) | crystallization |
| Keyword(3) | laser annealing |
| Keyword(4) | sheet resistance |
| Keyword(5) | electrical activation |
| Keyword(6) | mobility |
| Keyword(7) | grain boundary |
| Keyword(8) | thin film transistor |
| 1st Author's Name | Takashi Noguchi |
| 1st Author's Affiliation | University of the Ryukyus (Univ. of Ryukyus) |
| 2nd Author's Name | Toshiharu Suzuki |
| 2nd Author's Affiliation | University of the Ryukyus (Univ. of Ryukyus) |
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| Speaker | Author-2 |
| Date Time | 2010-07-02 10:00:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | ED2010-85, SDM2010-86 |
| Volume (vol) | vol.110 |
| Number (no) | no.109(ED), no.110(SDM) |
| Page | pp.149-153 |
| #Pages | 5 |
| Date of Issue | 2010-06-23 (ED, SDM) |
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