講演抄録/キーワード |
講演名 |
2010-07-02 11:35
The Impact of Current Controlled-MOS Current Mode Logic /Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation ○Tetsuo Endoh・Masashi Kamiyanagi・Masakazu Muraguchi・Takuya Imamoto・Takeshi Sasaki(Tohoku Univ.) ED2010-109 SDM2010-110 エレソ技報アーカイブへのリンク:ED2010-109 SDM2010-110 |
抄録 |
(和) |
In order to realize Integrated Circuits (IC) with operation over the 10GHz range, conventional CMOS logic face critical issues, such as increasing power consumption, and difficulty to aggressively scale the device size and so on. To overcome this issue, we have proposed Current Controlled-MOS Current Mode Logic (CC-MCML) to realize the reduction of power consumption and the enhancement of the operation speed in logic circuits without scaling the gate length of the MOSFET, and confirmed the performance of these circuits both theoretically and experimentally. In the CC-MCML it is extremely important to control the input voltage of the MOSFET used as the constant current source in order to make the base voltage of the input signal and the output signal equivalent. In this paper, we propose CC-MCML/MTJ (Magnetic Tunnel Junction) circuit, which is one type of nonvolatile memory hybrid circuit technology. A more stable and precise operation is realized by cutting the range of the input voltage of the constant current source, and it is shown that the operation of CC-MCML/MTJ Hybrid Circuit enables us to suppress the base voltage difference due to the Vth fluctuation in comparison with the conventional CC-MCML. These results imply the high potential of Si-CMOS/Spintronics Hybrid technologies for future IC. |
(英) |
In order to realize Integrated Circuits (IC) with operation over the 10GHz range, conventional CMOS logic face critical issues, such as increasing power consumption, and difficulty to aggressively scale the device size and so on. To overcome this issue, we have proposed Current Controlled-MOS Current Mode Logic (CC-MCML) to realize the reduction of power consumption and the enhancement of the operation speed in logic circuits without scaling the gate length of the MOSFET, and confirmed the performance of these circuits both theoretically and experimentally. In the CC-MCML it is extremely important to control the input voltage of the MOSFET used as the constant current source in order to make the base voltage of the input signal and the output signal equivalent. In this paper, we propose CC-MCML/MTJ (Magnetic Tunnel Junction) circuit, which is one type of nonvolatile memory hybrid circuit technology. A more stable and precise operation is realized by cutting the range of the input voltage of the constant current source, and it is shown that the operation of CC-MCML/MTJ Hybrid Circuit enables us to suppress the base voltage difference due to the Vth fluctuation in comparison with the conventional CC-MCML. These results imply the high potential of Si-CMOS/Spintronics Hybrid technologies for future IC. |
キーワード |
(和) |
Current Controlled-MCML / MCML / Vth Fluctuation / Stability / NMOS / PMOS / MTJ / TMR |
(英) |
Current Controlled-MCML / MCML / Vth Fluctuation / Stability / NMOS / PMOS / MTJ / TMR |
文献情報 |
信学技報, vol. 110, no. 110, SDM2010-110, pp. 257-262, 2010年6月. |
資料番号 |
SDM2010-110 |
発行日 |
2010-06-23 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2010-109 SDM2010-110 エレソ技報アーカイブへのリンク:ED2010-109 SDM2010-110 |
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