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| Presentation | 2010-07-02 15:50 Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories Akira Otake, Keita Yamaguchi, Kenji Shiraishi (Univ. of Tsukuba.)  ED2010-100 SDM2010-101 Link to ES Tech. Rep. Archives: ED2010-100 SDM2010-101 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Due to the aggressive scaling of non-volatile memories, “charge-trap memories” such as MONOS type memories are inevitable. One of the merits of charge trap memories is that they can trap charge inside atomic-scale defect sites in SiN layers. At the same time, however, charge traps with atomistic scale tend to induce additional large structural changes. Hydrogen has attracted a great attention as important heteroatom in MONOS type memories. We theoretically investigate the basic characteristics of hydrogen-defects in SiN layer in MONOS type memories based on first principle calculations. We found that SiN structures with a hydrogen impurity tend to reveal reversible structural change during program/erase operation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MONOS / SiN / First principles calculations / non-volatile memory / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 110, SDM2010-101, pp. 221-224, June 2010. | |
| Paper # | SDM2010-101 | |
| Date of Issue | 2010-06-23 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-100 SDM2010-101 Link to ES Tech. Rep. Archives: ED2010-100 SDM2010-101 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2010-06-30 - 2010-07-02 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo Inst. of Tech. Ookayama Campus |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-06-ED-SDM |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories |
| Sub Title (in English) | |
| Keyword(1) | MONOS |
| Keyword(2) | SiN |
| Keyword(3) | First principles calculations |
| Keyword(4) | non-volatile memory |
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| 1st Author's Name | Akira Otake |
| 1st Author's Affiliation | University of Tsukuba (Univ. of Tsukuba.) |
| 2nd Author's Name | Keita Yamaguchi |
| 2nd Author's Affiliation | University of Tsukuba (Univ. of Tsukuba.) |
| 3rd Author's Name | Kenji Shiraishi |
| 3rd Author's Affiliation | University of Tsukuba (Univ. of Tsukuba.) |
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| Speaker | Author-2 |
| Date Time | 2010-07-02 15:50:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | ED2010-100, SDM2010-101 |
| Volume (vol) | vol.110 |
| Number (no) | no.109(ED), no.110(SDM) |
| Page | pp.221-224 |
| #Pages | 4 |
| Date of Issue | 2010-06-23 (ED, SDM) |
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