Paper Abstract and Keywords |
Presentation |
2010-07-02 12:15
High Integrity Gate Insulator Films on Atomically Flat Silicon Surface Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2010-93 SDM2010-94 Link to ES Tech. Rep. Archives: ED2010-93 SDM2010-94 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A low temperature atomically flattening technology for Si(100) wafer is developed. By annealing in ultra pure argon ambient at 800 ºC, atomically flat surfaces composed of atomic terraces and steps appear uniformly in the whole 200 mm wafer without generating slip line defects. Moreover, the whole 200 mm wafer surface can be atomically flattened in shorter time by increasing the argon gas flow rate and the annealing temperature of vertical furnace. Furthermore, the MOS capacitors with the atomically flat gate oxide/Si interface formed by radical oxidation on the flattened surface show superior insulating properties such as higher Ebd and Qbd. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
silicon surface / atomically flattening / MOS / radical oxidation / SiO2/Si interface / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 110, SDM2010-94, pp. 183-188, June 2010. |
Paper # |
SDM2010-94 |
Date of Issue |
2010-06-23 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2010-93 SDM2010-94 Link to ES Tech. Rep. Archives: ED2010-93 SDM2010-94 |
Conference Information |
Committee |
ED SDM |
Conference Date |
2010-06-30 - 2010-07-02 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tokyo Inst. of Tech. Ookayama Campus |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2010-06-ED-SDM |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
High Integrity Gate Insulator Films on Atomically Flat Silicon Surface |
Sub Title (in English) |
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Keyword(1) |
silicon surface |
Keyword(2) |
atomically flattening |
Keyword(3) |
MOS |
Keyword(4) |
radical oxidation |
Keyword(5) |
SiO2/Si interface |
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1st Author's Name |
Xiang Li |
1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
2nd Author's Name |
Rihito Kuroda |
2nd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
3rd Author's Name |
Tomoyuki Suwa |
3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
4th Author's Name |
Akinobu Teramoto |
4th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
5th Author's Name |
Shigetoshi Sugawa |
5th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
6th Author's Name |
Tadahiro Ohmi |
6th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2010-07-02 12:15:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
ED2010-93, SDM2010-94 |
Volume (vol) |
vol.110 |
Number (no) |
no.109(ED), no.110(SDM) |
Page |
pp.183-188 |
#Pages |
6 |
Date of Issue |
2010-06-23 (ED, SDM) |
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