講演抄録/キーワード |
講演名 |
2010-07-02 11:50
Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation ○Masashi Kamiyanagi・Takuya Imamoto・Takeshi Sasaki・Hyoungjun Na・Tetsuo Endoh(Tohoku Univ.) ED2010-110 SDM2010-111 エレソ技報アーカイブへのリンク:ED2010-110 SDM2010-111 |
抄録 |
(和) |
We have succeeded in the verification of stable circuit operation of 180nm Current Controlled MOS Current Mode Logic (CC-MCML) under threshold voltage fluctuations by measurement. The performance stability of the CC-MCML inverter under the fluctuations of threshold voltage of NMOS and PMOS is evaluated from the viewpoint of diminishing the bias offset voltage ΔVB. The ΔVB, that is defined as (base voltage of output waveform) - (base voltage of input waveform), is a key design parameter for differential circuit. It is shown that when the threshold voltage of NMOS fluctuates in the range of 0.53V to 0.69V, and threshold voltage of PMOS fluctuates in the range of –0.47V to –0.67V, the CC-MCML technique is able to suppress ΔVB within only 30mV, where as the conventional MCML technique caused maximum ΔVB of 1.0V. In this paper, it is verified for the first time that the proposed CC-MCML is more tolerant against the fluctuations of threshold voltages than the conventional MCML. |
(英) |
We have succeeded in the verification of stable circuit operation of 180nm Current Controlled MOS Current Mode Logic (CC-MCML) under threshold voltage fluctuations by measurement. The performance stability of the CC-MCML inverter under the fluctuations of threshold voltage of NMOS and PMOS is evaluated from the viewpoint of diminishing the bias offset voltage ΔVB. The ΔVB, that is defined as (base voltage of output waveform) - (base voltage of input waveform), is a key design parameter for differential circuit. It is shown that when the threshold voltage of NMOS fluctuates in the range of 0.53V to 0.69V, and threshold voltage of PMOS fluctuates in the range of –0.47V to –0.67V, the CC-MCML technique is able to suppress ΔVB within only 30mV, where as the conventional MCML technique caused maximum ΔVB of 1.0V. In this paper, it is verified for the first time that the proposed CC-MCML is more tolerant against the fluctuations of threshold voltages than the conventional MCML. |
キーワード |
(和) |
Current Controlled-MCML / MCML / Vth Fluctuation / Stability / NMOS / PMOS / / |
(英) |
Current Controlled-MCML / MCML / Vth Fluctuation / Stability / NMOS / PMOS / / |
文献情報 |
信学技報, vol. 110, no. 110, SDM2010-111, pp. 263-267, 2010年6月. |
資料番号 |
SDM2010-111 |
発行日 |
2010-06-23 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2010-110 SDM2010-111 エレソ技報アーカイブへのリンク:ED2010-110 SDM2010-111 |
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