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Paper Abstract and Keywords
Presentation 2010-06-30 16:10
Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures
Safumi Suzuki, Kiyohito Sawada, Atsushi Teranishi, Masahiro Asada (Tokyo Inst. of Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-61 SDM2010-62 Link to ES Tech. Rep. Archives: ED2010-61 SDM2010-62
Abstract (in Japanese) (See Japanese page) 
(in English) We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) having spike-doped structures. The voltages at the current peak were 0.67 and 0.4 V for RTDs with the spike-doping concentrations of 2×10^18 and 1×10^19 cm^-3, respectively, and 0.94 V for the RTD without spike doping. The peak current densities were around 18 mA/um^2 and remained almost unchanged even after the spike doping. The highest oscillation frequency observed in this study was 898 GHz in the 0.53-um^2-mesa area for the RTD with a spike-doping concentration of 2×10^18 cm^-3.
Keyword (in Japanese) (See Japanese page) 
(in English) terahertz / resonant tunneling diode / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 109, ED2010-61, pp. 47-48, June 2010.
Paper # ED2010-61 
Date of Issue 2010-06-23 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Conference Information
Committee ED SDM  
Conference Date 2010-06-30 - 2010-07-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Inst. of Tech. Ookayama Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2010-06-ED-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures 
Sub Title (in English)  
Keyword(1) terahertz  
Keyword(2) resonant tunneling diode  
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1st Author's Name Safumi Suzuki  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
2nd Author's Name Kiyohito Sawada  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
3rd Author's Name Atsushi Teranishi  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
4th Author's Name Masahiro Asada  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
5th Author's Name Hiroki Sugiyama  
5th Author's Affiliation NTT Photonics Laboratories (NTT)
6th Author's Name Haruki Yokoyama  
6th Author's Affiliation NTT Photonics Laboratories (NTT)
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Speaker
Date Time 2010-06-30 16:10:00 
Presentation Time 15 
Registration for ED 
Paper # IEICE-ED2010-61,IEICE-SDM2010-62 
Volume (vol) IEICE-110 
Number (no) no.109(ED), no.110(SDM) 
Page pp.47-48 
#Pages IEICE-2 
Date of Issue IEICE-ED-2010-06-23,IEICE-SDM-2010-06-23 


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