Paper Abstract and Keywords |
Presentation |
2010-06-30 14:50
[Invited Talk]
Graphene channel FET: A New Candidate for High-Speed Devices Tetsuya Suemitsu (Tohoku Univ.) ED2010-67 SDM2010-68 Link to ES Tech. Rep. Archives: ED2010-67 SDM2010-68 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Graphene is a single layer of graphite and is now one of exciting area of research because of its potential of high carrier mobility both for electrons and holes. This makes graphene a promising candidate of the channel material of next generation transistors. As well as the material properties, the process compatibility is also an important factor in the semiconductor manufacturing. Therefore we have developed the epitaxial graphene on silicon substrates in a way that SiC is grown on silicon substrates and graphene is formed at the surface of the SiC layer by thermal decomposition in ultra-high vacuum. Back-gate and top-gate field effect transistors by using the epitaxial graphene on silicon substrates were fabricated and characterized. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
graphene / transistor / SiC / silicon / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 109, ED2010-67, pp. 69-72, June 2010. |
Paper # |
ED2010-67 |
Date of Issue |
2010-06-23 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2010-67 SDM2010-68 Link to ES Tech. Rep. Archives: ED2010-67 SDM2010-68 |
Conference Information |
Committee |
ED SDM |
Conference Date |
2010-06-30 - 2010-07-02 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tokyo Inst. of Tech. Ookayama Campus |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
ED |
Conference Code |
2010-06-ED-SDM |
Language |
English (Japanese title is available) |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Graphene channel FET: A New Candidate for High-Speed Devices |
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graphene |
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transistor |
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SiC |
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silicon |
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Tetsuya Suemitsu |
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Tohoku University (Tohoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2010-06-30 14:50:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2010-67, SDM2010-68 |
Volume (vol) |
vol.110 |
Number (no) |
no.109(ED), no.110(SDM) |
Page |
pp.69-72 |
#Pages |
4 |
Date of Issue |
2010-06-23 (ED, SDM) |
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