The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure
○Guobin Wei・Yuta Goto・Akio Ohta・Katsunori Makihara・Hideki Murakami・Seiichiro Higashi・Seiichi Miyazaki（Hiroshima Univ.） エレソ技報アーカイブへのリンク：ED2010-57 SDM2010-58
||Resistive switching of Metal-Insulator-Metal (MIM) consisting of a MOCVD TiO2 layer sandwiched with Pt
electrodes has been measured systematically before and after thermal anneal in different ambiences. With H2 anneal at 400ºC,
the current level in the high-resistive state (HRS) was significantly decreased while little change in the low-resistive state
(LRS) was observable. As a result, the switching ratio over 7 order of magnitude in current level was obtained. From the
analysis of current-voltage (I-V) characteristics in HRS and LRS, we found that the LRS was characterized with an ohmic
conduction while, in the HRS after H2 anneal, charge trapping became significant as a result of significant decrease in the
current level. In a separate experiment, a partial reduction of TiO2 was detected by high-resolution X-ray photoelectron
spectroscopy (XPS) measurements after switching from HRS to LRS by using a mercury probe as a top electrode, which is
associated with the filament formation.
|| / / / / / / /
||ReRAM / TiO2 / Low Temperature / H2 Anneal / Charge Trapping / / /
||信学技報, vol. 110, no. 110, SDM2010-58, pp. 31-36, 2010年6月.
||2010-06-23 (ED, SDM)
||Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380