Paper Abstract and Keywords |
Presentation |
2010-06-30 12:00
[Invited Talk]
Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors Masanobu Miyao (Kyushu Univ.), Kohei Hamaya (Kyushu Univ./JST) ED2010-52 SDM2010-53 Link to ES Tech. Rep. Archives: ED2010-52 SDM2010-53 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (SiGe) was reviewed. By optimizing beam flux ratio (Fe:Si=3:1) and growth temperature (<130 oC), a high quality hybrid structure, i.e., DO3-type Fe3Si on SiGe with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity and electrical properties with reasonable Schottky barrier height were obtained. Electrical injection and detection of spin-polarized electron in Si was successfully demonstrated. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of SiGe channel with high mobility and Fe3Si source/drain for spin-injection. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
magnetic silicide / SiGe / spin-transistors / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 110, SDM2010-53, pp. 11-13, June 2010. |
Paper # |
SDM2010-53 |
Date of Issue |
2010-06-23 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2010-52 SDM2010-53 Link to ES Tech. Rep. Archives: ED2010-52 SDM2010-53 |
Conference Information |
Committee |
ED SDM |
Conference Date |
2010-06-30 - 2010-07-02 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tokyo Inst. of Tech. Ookayama Campus |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2010-06-ED-SDM |
Language |
English (Japanese title is available) |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors |
Sub Title (in English) |
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magnetic silicide |
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SiGe |
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spin-transistors |
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1st Author's Name |
Masanobu Miyao |
1st Author's Affiliation |
Kyushu University (Kyushu Univ.) |
2nd Author's Name |
Kohei Hamaya |
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Kyushu University/Japan Science and Technology Agency (Kyushu Univ./JST) |
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Speaker |
Author-1 |
Date Time |
2010-06-30 12:00:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
ED2010-52, SDM2010-53 |
Volume (vol) |
vol.110 |
Number (no) |
no.109(ED), no.110(SDM) |
Page |
pp.11-13 |
#Pages |
3 |
Date of Issue |
2010-06-23 (ED, SDM) |
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