Paper Abstract and Keywords |
Presentation |
2010-06-25 14:05
[Invited Talk]
Report on 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010) Kazunori Shinoda (Hitachi) OPE2010-14 LQE2010-16 Link to ES Tech. Rep. Archives: OPE2010-14 LQE2010-16 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The latest technological achievements and technology trends appeared at the 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010) are reported. The conference was held in Takamatsu, Japan from May 31 to June 4, 2010, collocated with the 37th International Symposium on Compound Semiconductors (ISCS 2010). The intention behind this collocation was to bring together international researchers in the field of compound semiconductors, and encourage the development of new technologies and ideas. The IPRM 2010 covered the latest advances in materials, growth, processing, photonic devices, electron devices and applications of InP and related materials. One of the hot topics regarding photonic devices was InP-based monolithic integration technology. From reported results, further progress in monolithic integration technology was expected. Other topics included the integration of III-V compound semiconductors on silicon for the conversion of photonics and electronics, nanostructures including quantum dots, and growth of nitride-based and antimonide-based semiconductors. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Indium Phosphide / Compound Semiconductor / Photonic Device / International Conference / Technology Trend / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 103, LQE2010-16, pp. 1-1, June 2010. |
Paper # |
LQE2010-16 |
Date of Issue |
2010-06-18 (OPE, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
OPE2010-14 LQE2010-16 Link to ES Tech. Rep. Archives: OPE2010-14 LQE2010-16 |
Conference Information |
Committee |
OPE LQE |
Conference Date |
2010-06-25 - 2010-06-25 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
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(See Japanese page) |
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Paper Information |
Registration To |
LQE |
Conference Code |
2010-06-OPE-LQE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Report on 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010) |
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Indium Phosphide |
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Compound Semiconductor |
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Photonic Device |
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International Conference |
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Technology Trend |
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1st Author's Name |
Kazunori Shinoda |
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Hitachi, Ltd. (Hitachi) |
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Speaker |
Author-1 |
Date Time |
2010-06-25 14:05:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
OPE2010-14, LQE2010-16 |
Volume (vol) |
vol.110 |
Number (no) |
no.102(OPE), no.103(LQE) |
Page |
p.1 |
#Pages |
1 |
Date of Issue |
2010-06-18 (OPE, LQE) |
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