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| Presentation | 2010-06-17 15:15 Fabrication of high-frequency and high-power AlGaN/GaN HEMTs Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.)  ED2010-38 Link to ES Tech. Rep. Archives: ED2010-38 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | High-power AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and long-range wireless communications to transmit large amount of data; this is because of these transistors can operate at millimeter-wave frequency band (30-300 GHz). In this contribution, we improved radio frequency (RF) and output power characteristics of the AlGaN/GaN MIS-HEMTs with SiN/SiO2/SiN triple-layer insulators by decreasing gate length (Lg), source-drain spacing (Lsd) and thickness of AlGaN barrier layer. As the Lsd decreasing from 2.0 μm to 1.0 μm, the drain current (Id), transconductance (gm), cutoff frequency (fT) and maximum oscillation frequency (fmax) were increased, and we achieved high fT of 188 GHz and fmax of 173 GHz for the 45-nm-gate MIS-HEMT. Furthermore, we also obtained high gain of 5.1 dB and output power density of 182 mW/mm at a frequency of 85 GHz for the MIS-HEMT with 80-nm-long and 100-μm-width gates. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN/GaN MIS-HEMT / SiN/SiO2/SiN triple-layer insulators / RF and output power characteristic / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 80, ED2010-38, pp. 25-30, June 2010. | |
| Paper # | ED2010-38 | |
| Date of Issue | 2010-06-10 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-38 Link to ES Tech. Rep. Archives: ED2010-38 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2010-06-17 - 2010-06-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | JAIST |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process and device technology of semiconductors (surface, interface, reliability, etc.) |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-06-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of high-frequency and high-power AlGaN/GaN HEMTs |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN MIS-HEMT |
| Keyword(2) | SiN/SiO2/SiN triple-layer insulators |
| Keyword(3) | RF and output power characteristic |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yoshimi Yamashita |
| 1st Author's Affiliation | National Institute of Information and Communicactions Technology (NICT) |
| 2nd Author's Name | Issei Watanabe |
| 2nd Author's Affiliation | National Institute of Information and Communicactions Technology (NICT) |
| 3rd Author's Name | Akira Endoh |
| 3rd Author's Affiliation | National Institute of Information and Communicactions Technology (NICT) |
| 4th Author's Name | Nobumitsu Hirose |
| 4th Author's Affiliation | National Institute of Information and Communicactions Technology (NICT) |
| 5th Author's Name | Toshiaki Matsui |
| 5th Author's Affiliation | National Institute of Information and Communicactions Technology (NICT) |
| 6th Author's Name | Takashi Mimura |
| 6th Author's Affiliation | National Institute of Information and Communicactions Technology/Fujitsu Laboratories Limited (NICT/Fujitsu lab.) |
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| Speaker | Author-1 |
| Date Time | 2010-06-17 15:15:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2010-38 |
| Volume (vol) | vol.110 |
| Number (no) | no.80 |
| Page | pp.25-30 |
| #Pages | 6 |
| Date of Issue | 2010-06-10 (ED) |
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