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Paper Abstract and Keywords
Presentation 2010-05-27 13:20
CMOS Inverter Based on a Stacked Structure Using Silicone-Resin as Dielectric Layers
Kodai Kikuchi, Hiroshi Yamauchi, Masaaki Iizuka, Masatoshi Sakai, Masakazu Nakamura, Kazuhiro Kudo (Chiba Univ.) OME2010-18 Link to ES Tech. Rep. Archives: OME2010-18
Abstract (in Japanese) (See Japanese page) 
(in English) We have demonstrated the inverter operation of stacked-structure CMOS devices using pentacene and ZnO as active layers. The fabrication process of the device is as follows: A top-gate-type ZnO thin-film transistor (TFT), which works as an n-channel transistor, was formed on a glass substrate. Then, a bottom-gate-type pentacene TFT, as a p-channel transistor, was formed on top of the ZnO TFT while sharing a common gate electrode. For both TFTs, solution-processed silicone-resin layers were used as gate dielectric. The stacked-structure CMOS has several advantages of, for example, easiness of active material patterning, compact device area per stage and the short length of the interconnection as compared with the planar configuration in a conventional CMOS circuit.
Keyword (in Japanese) (See Japanese page) 
(in English) CMOS inverter / silicone-resin / pentacene / ZnO / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 59, OME2010-18, pp. 7-10, May 2010.
Paper # OME2010-18 
Date of Issue 2010-05-20 (OME) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OME2010-18 Link to ES Tech. Rep. Archives: OME2010-18

Conference Information
Committee OME  
Conference Date 2010-05-27 - 2010-05-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Organic Materials, General 
Paper Information
Registration To OME 
Conference Code 2010-05-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) CMOS Inverter Based on a Stacked Structure Using Silicone-Resin as Dielectric Layers 
Sub Title (in English)  
Keyword(1) CMOS inverter  
Keyword(2) silicone-resin  
Keyword(3) pentacene  
Keyword(4) ZnO  
1st Author's Name Kodai Kikuchi  
1st Author's Affiliation Chiba University (Chiba Univ.)
2nd Author's Name Hiroshi Yamauchi  
2nd Author's Affiliation Chiba University (Chiba Univ.)
3rd Author's Name Masaaki Iizuka  
3rd Author's Affiliation Chiba University (Chiba Univ.)
4th Author's Name Masatoshi Sakai  
4th Author's Affiliation Chiba University (Chiba Univ.)
5th Author's Name Masakazu Nakamura  
5th Author's Affiliation Chiba University (Chiba Univ.)
6th Author's Name Kazuhiro Kudo  
6th Author's Affiliation Chiba University (Chiba Univ.)
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Date Time 2010-05-27 13:20:00 
Presentation Time 20 
Registration for OME 
Paper # IEICE-OME2010-18 
Volume (vol) IEICE-110 
Number (no) no.59 
Page pp.7-10 
#Pages IEICE-4 
Date of Issue IEICE-OME-2010-05-20 

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