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Paper Abstract and Keywords
Presentation 2010-02-23 09:30
[Invited Talk] Effect of interface properties on characteristics of carbon nanotube FETs
Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2009-205 SDM2009-202 Link to ES Tech. Rep. Archives: ED2009-205 SDM2009-202
Abstract (in Japanese) (See Japanese page) 
(in English) In order to control the property of carbon nanotube field-effect transistors (CNFETs), it is important to understand properties of various interfaces in the device. In this report, the influence of interface charges introduced by a deposition of a high-k insulator layer on top of a back-gate CNFET is discussed, based on electrical characterization and C-V measurements. We propose a novel technique to control the type of conduction by utilizing interface fixed charges.
Keyword (in Japanese) (See Japanese page) 
(in English) carbon nanotube / FET / CMOS / gate insulator / interface / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 422, ED2009-205, pp. 53-58, Feb. 2010.
Paper # ED2009-205 
Date of Issue 2010-02-15 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-205 SDM2009-202 Link to ES Tech. Rep. Archives: ED2009-205 SDM2009-202

Conference Information
Committee ED SDM  
Conference Date 2010-02-22 - 2010-02-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawaken-Seinen-Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional Nano Device and Related Technology 
Paper Information
Registration To ED 
Conference Code 2010-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of interface properties on characteristics of carbon nanotube FETs 
Sub Title (in English)  
Keyword(1) carbon nanotube  
Keyword(2) FET  
Keyword(3) CMOS  
Keyword(4) gate insulator  
Keyword(5) interface  
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1st Author's Name Yutaka Ohno  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Naoki Moriyama  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Takamitsu Kitamura  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Kosuke Suzuki  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Shigeru Kishimoto  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
6th Author's Name Takashi Mizutani  
6th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker
Date Time 2010-02-23 09:30:00 
Presentation Time 40 
Registration for ED 
Paper # IEICE-ED2009-205,IEICE-SDM2009-202 
Volume (vol) IEICE-109 
Number (no) no.422(ED), no.423(SDM) 
Page pp.53-58 
#Pages IEICE-6 
Date of Issue IEICE-ED-2010-02-15,IEICE-SDM-2010-02-15 


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