Paper Abstract and Keywords |
Presentation |
2010-02-22 16:05
Fabrication of Planar-Type Ferromagnetic Tunnel Junctions Using Field-Emission-Induced Electromigration Kazutoshi Takiya, Yusuke Tomoda, Takato Watanabe, Watari Kume, Shunsuke Ueno, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech) ED2009-203 SDM2009-200 Link to ES Tech. Rep. Archives: ED2009-203 SDM2009-200 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We study nanometer-sized spintronic devices with ferromagnetic tunnel junctions. Tunnel magnetoresitance (TMR) observed in the devices has been extensively investigated both experimentally and theoretically. Here, we fabricated planar-type Ni-vacuum-Ni ferromagnetic tunnel junctions, whose geometry is asymmetrically butterfly-shaped for inducing the magnetic shape anisotropy, using field-emission-induced electromigration (so-called “activation”). In the activation method, we were simply and easily able to control the tunnel resitance from 1.6 MΩ to 169 kΩ by only adjusting the magnitude of field emission current, resulting in a decrease of the initial nanogap separation from approximately 40 nm to less than 10 nm. Therefore, the activation technique is most important for the formation of planar-type Ni-vaccum-Ni ferromagnetic tunnel junctions. The resistance of the junctions formed by the activation was varied by external magnetic fields, and the magnetoresistance (MR) ratio of approximately 12.2 % was obtained at 16 K with the bias voltage of 0.72 mV. With increasing the bias voltage from 0.72 to 7.3 mV, the MR ratio decreased from 12.2 to 6.2 %. When the applied bias voltage was fixed at 1.6 mV, the MR ratio also decreased from 11.6 % to 1.2 % with increasing the measurement temperature from 16 to 270 K. These results strongly suggest that activation method can be useful to easily fabricate planar-type ferromagnetic tunnel junctions. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
eletromigration / field emission current / ferromagnetic tunnel junction / magnetoresistance / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 422, ED2009-203, pp. 41-45, Feb. 2010. |
Paper # |
ED2009-203 |
Date of Issue |
2010-02-15 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2009-203 SDM2009-200 Link to ES Tech. Rep. Archives: ED2009-203 SDM2009-200 |
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