Paper Abstract and Keywords |
Presentation |
2010-02-05 13:00
Advanced Direct-CMP Process for Porous Low-k Thin Film Hayato Korogi (Panasonic), Hiroyuki Chibahara (Renesas), S. Suzuki, M. Tsutsue (Panasonic), K. Seo (Panasonic Semiconductor Engineering), Y. Oka, K. Goto, M. Akazaw, Hiroshi Miyatake (Renesas), S. Matsumoto, T. Ueda (Panasonic) SDM2009-185 Link to ES Tech. Rep. Archives: SDM2009-185 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In order to reduce the effective dielectric constant (keff) for the 32 nm technology node and beyond, Direct-CMP of a porous low-k film without a protective cap layer is required. However, the degradation of breakdown electric field (Ebd) has been one of critical issues. This study clarified that the Ebd degradation was caused by the pit defects on the surface of porous low-k film during Direct-CMP. Furthermore, we demonstrated that CMP pads with low-density micro-pores drastically reduced them and improved the Ebd degradation. In this paper, the mechanism for their reduction is also discussed. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Direct-CMP / Porous Low-k / Ebd / Pit defect / CMP pad / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 412, SDM2009-185, pp. 19-23, Feb. 2010. |
Paper # |
SDM2009-185 |
Date of Issue |
2010-01-29 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2009-185 Link to ES Tech. Rep. Archives: SDM2009-185 |
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