Paper Abstract and Keywords |
Presentation |
2010-01-28 17:40
Fabrication of 1μm waveband high growth rate quantum dots laser for low threshold current Takuya Nakamura (Tokyo Metro Univ.), Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi (NICT), Hiroharu Sugawara (Tokyo Metro Univ.) PN2009-48 OPE2009-186 LQE2009-168 Link to ES Tech. Rep. Archives: OPE2009-186 LQE2009-168 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We fabricated and demonstrated semiconductor quantum dots laser operating at 1um waveband. Utilizing high rate MBE growth, high density InGaAs quantum dots were prepared, which showed room temperature EL and PL at 1um waveband. Ridge type semiconductor laser involving high rate grown quantum dots showed a laser emission of 1053nm at room temprature, whose threshold current was as low as 25.9mA. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaAs / Quantum dot / High growth rate / Semiconductor laser / 1um Waveband / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 402, OPE2009-186, pp. 71-74, Jan. 2010. |
Paper # |
OPE2009-186 |
Date of Issue |
2010-01-21 (PN, OPE, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
PN2009-48 OPE2009-186 LQE2009-168 Link to ES Tech. Rep. Archives: OPE2009-186 LQE2009-168 |
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