IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2010-01-28 17:40
Fabrication of 1μm waveband high growth rate quantum dots laser for low threshold current
Takuya Nakamura (Tokyo Metro Univ.), Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi (NICT), Hiroharu Sugawara (Tokyo Metro Univ.) PN2009-48 OPE2009-186 LQE2009-168 Link to ES Tech. Rep. Archives: OPE2009-186 LQE2009-168
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricated and demonstrated semiconductor quantum dots laser operating at 1um waveband. Utilizing high rate MBE growth, high density InGaAs quantum dots were prepared, which showed room temperature EL and PL at 1um waveband. Ridge type semiconductor laser involving high rate grown quantum dots showed a laser emission of 1053nm at room temprature, whose threshold current was as low as 25.9mA.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaAs / Quantum dot / High growth rate / Semiconductor laser / 1um Waveband / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 402, OPE2009-186, pp. 71-74, Jan. 2010.
Paper # OPE2009-186 
Date of Issue 2010-01-21 (PN, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF PN2009-48 OPE2009-186 LQE2009-168 Link to ES Tech. Rep. Archives: OPE2009-186 LQE2009-168

Conference Information
Committee OPE EMT LQE PN IEE-EMT  
Conference Date 2010-01-28 - 2010-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OPE 
Conference Code 2010-01-OPE-EMT-LQE-PN-EMT 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of 1μm waveband high growth rate quantum dots laser for low threshold current 
Sub Title (in English)  
Keyword(1) InGaAs  
Keyword(2) Quantum dot  
Keyword(3) High growth rate  
Keyword(4) Semiconductor laser  
Keyword(5) 1um Waveband  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takuya Nakamura  
1st Author's Affiliation Tokyo Metropolitan University (Tokyo Metro Univ.)
2nd Author's Name Kouichi Akahane  
2nd Author's Affiliation National Institute of Information and Communications Technology (NICT)
3rd Author's Name Naokatsu Yamamoto  
3rd Author's Affiliation National Institute of Information and Communications Technology (NICT)
4th Author's Name Tetsuya Kawanishi  
4th Author's Affiliation National Institute of Information and Communications Technology (NICT)
5th Author's Name Hiroharu Sugawara  
5th Author's Affiliation Tokyo Metropolitan University (Tokyo Metro Univ.)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2010-01-28 17:40:00 
Presentation Time 25 minutes 
Registration for OPE 
Paper # PN2009-48, OPE2009-186, LQE2009-168 
Volume (vol) vol.109 
Number (no) no.401(PN), no.402(OPE), no.403(LQE) 
Page pp.71-74 
#Pages
Date of Issue 2010-01-21 (PN, OPE, LQE) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan