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Paper Abstract and Keywords
Presentation 2010-01-28 14:20
Characterization of Nonradiative Recombination Centers in InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence
Tomohiko Yamaguchi, Kouhei Igarashi, Takeshi Fukuda, Zentaro Honda, Norihiko Kamata (Saitama Univ.) Link to ES Tech. Rep. Archives: EID2009-55
Abstract (in Japanese) (See Japanese page) 
(in English) We investigated below-gap levels in MOCVD-grown Si-doped In0.16Ga0.84N/In0.02Ga0.98N Quantum well (QW) structures by an optical method of Two-wavelength Excited Photoluminescence, as the non-destructive, non-contacting spectroscopy without electrode. Though the dependence of intensity and energy (1.27~1.95eV) of the below-gap excitation on the photoluminescence intensity change, we found that Si-doping in both barrier and well layers reduced the density of below-gap states in the QW region.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN / Si-doping / Quantum well structure / Non-radiative recombination center / Two-wavelength excited photoluminescence / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 404, EID2009-55, pp. 33-36, Jan. 2010.
Paper #  
Date of Issue 2010-01-21 (EID) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF Link to ES Tech. Rep. Archives: EID2009-55

Conference Information
Conference Date 2010-01-28 - 2010-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyusyu Univ. (Chikushi Campus) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To IEIJ-SSL 
Conference Code 2010-01-IDY-EID-OMD-EDD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of Nonradiative Recombination Centers in InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence 
Sub Title (in English)  
Keyword(1) InGaN  
Keyword(2) Si-doping  
Keyword(3) Quantum well structure  
Keyword(4) Non-radiative recombination center  
Keyword(5) Two-wavelength excited photoluminescence  
1st Author's Name Tomohiko Yamaguchi  
1st Author's Affiliation Saitama University (Saitama Univ.)
2nd Author's Name Kouhei Igarashi  
2nd Author's Affiliation Saitama University (Saitama Univ.)
3rd Author's Name Takeshi Fukuda  
3rd Author's Affiliation Saitama University (Saitama Univ.)
4th Author's Name Zentaro Honda  
4th Author's Affiliation Saitama University (Saitama Univ.)
5th Author's Name Norihiko Kamata  
5th Author's Affiliation Saitama University (Saitama Univ.)
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Date Time 2010-01-28 14:20:00 
Presentation Time
Registration for IEIJ-SSL 
Paper # IEICE-EID2009-55 
Volume (vol) IEICE-109 
Number (no) no.404 
Page pp.33-36 
#Pages IEICE-4 
Date of Issue IEICE-EID-2010-01-21 

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