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Paper Abstract and Keywords
Presentation 2010-01-28 14:15
Solution-processed n-ZnO nanocrystal/p-pentacene heterojunction EL devices
Hayato Kawasaki, Hisazumi Takeuchi, Toshihiko Toyama, Hiroaki Okamoto (Osaka Univ.) EID2009-54 Link to ES Tech. Rep. Archives: EID2009-54
Abstract (in Japanese) (See Japanese page) 
(in English) We demonstrate DC-driven hybrid EL devices composed of solution-processed n-ZnO nanocrystal (NC) emission layers and p-pentacene hole-transport layers. The structure of the EL device was glass/ITO/emission layer/pentacene/Al. The emission layer consisting of ZnO NCs with a crystal size of 8 nm was prepared by a screen-printing method. When the ITO-electrode was positively biased over 10 V, the EL emission, consisting of sharp ultraviolet (~380 nm) and broad green-yellow (~560 nm) spectral components, was observed. We introduced another pentacene layer at the cathode side, and found that the green-yellow component decreased.
Keyword (in Japanese) (See Japanese page) 
(in English) nanocrystal / EL / solution process / ZnO / exciton recombination / screen-printing / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 404, EID2009-54, pp. 29-32, Jan. 2010.
Paper # EID2009-54 
Date of Issue 2010-01-21 (EID) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2009-54 Link to ES Tech. Rep. Archives: EID2009-54

Conference Information
Committee ITE-IDY EID IEIJ-SSL IEE-EDD  
Conference Date 2010-01-28 - 2010-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyusyu Univ. (Chikushi Campus) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EID 
Conference Code 2010-01-IDY-EID-OMD-EDD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Solution-processed n-ZnO nanocrystal/p-pentacene heterojunction EL devices 
Sub Title (in English)  
Keyword(1) nanocrystal  
Keyword(2) EL  
Keyword(3) solution process  
Keyword(4) ZnO  
Keyword(5) exciton recombination  
Keyword(6) screen-printing  
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Keyword(8)  
1st Author's Name Hayato Kawasaki  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Hisazumi Takeuchi  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Toshihiko Toyama  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Hiroaki Okamoto  
4th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker
Date Time 2010-01-28 14:15:00 
Presentation Time
Registration for EID 
Paper # IEICE-EID2009-54 
Volume (vol) IEICE-109 
Number (no) no.404 
Page pp.29-32 
#Pages IEICE-4 
Date of Issue IEICE-EID-2010-01-21 


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