Paper Abstract and Keywords |
Presentation |
2010-01-15 11:20
An X-band GaN HEMT T/R Switch with 50% Bandwidth Masatake Hangai, Yukinobu Tarui, Yoshitaka Kamo, Morishige Hieda (Mitsubishi Electric Corp.) ED2009-194 MW2009-177 Link to ES Tech. Rep. Archives: ED2009-194 MW2009-177 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
An X-band high-power T/R switch with bandwidth extension circuit has been developed. The proposed circuit is based on series/shunt-shunt configuration, and realizes broadband performance at Rx-mode while keeping high-power handling capability and low insertion loss. To verify this methodology, we have fabricated an T/R switch using GaN HEMT. The switch circuit has achieved the power handling capability of 20W, the insertion loss of 1.2dB at Tx-mode, and the insertion loss of 1.7dB at Rx-mode in the 50% bandwidth of X-band. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
T/R switch / High-power / Bandwidth extension / GaN HEMT / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 361, MW2009-177, pp. 111-115, Jan. 2010. |
Paper # |
MW2009-177 |
Date of Issue |
2010-01-06 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-194 MW2009-177 Link to ES Tech. Rep. Archives: ED2009-194 MW2009-177 |
Conference Information |
Committee |
ED MW |
Conference Date |
2010-01-13 - 2010-01-15 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
MW |
Conference Code |
2010-01-ED-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
An X-band GaN HEMT T/R Switch with 50% Bandwidth |
Sub Title (in English) |
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Keyword(1) |
T/R switch |
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High-power |
Keyword(3) |
Bandwidth extension |
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GaN HEMT |
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1st Author's Name |
Masatake Hangai |
1st Author's Affiliation |
Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
2nd Author's Name |
Yukinobu Tarui |
2nd Author's Affiliation |
Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
3rd Author's Name |
Yoshitaka Kamo |
3rd Author's Affiliation |
Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
4th Author's Name |
Morishige Hieda |
4th Author's Affiliation |
Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
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Speaker |
Author-1 |
Date Time |
2010-01-15 11:20:00 |
Presentation Time |
25 minutes |
Registration for |
MW |
Paper # |
ED2009-194, MW2009-177 |
Volume (vol) |
vol.109 |
Number (no) |
no.360(ED), no.361(MW) |
Page |
pp.111-115 |
#Pages |
5 |
Date of Issue |
2010-01-06 (ED, MW) |
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