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| Presentation | 2010-01-14 10:50 AlGaN/GaN HEMT having periodic mesa-gate structure Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)  ED2009-183 MW2009-166 Link to ES Tech. Rep. Archives: ED2009-183 MW2009-166 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic mesa, the MMC HEMT has parallel mesa-shaped channels with two-dimensional electron gas (2DEG) surrounded by the gate electrode. MMC HEMT showed lower knee voltage and shallower threshold voltage compared to planar HEMT. This seems to arise from the reduction of relative access resistance and the surrounding-filed effect. The threshold voltage shifted systematically positive direction with decreasing channel width of the MMC structure. MMC HEMT exhibited small sub-threshold slope, high drain current ON/OFF ratio, good temperature dependence. In addition, MMC HEMT showed high current drivability in linear region and excellent current stability in saturation region. Thus, the MMC HEMT is a unique structure for improving gate controllability and stability. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / AlGaN / High Electron Mobility Transistor(HEMT) / Multi-Mesa-Channel structure / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 360, ED2009-183, pp. 49-53, Jan. 2010. | |
| Paper # | ED2009-183 | |
| Date of Issue | 2010-01-06 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-183 MW2009-166 Link to ES Tech. Rep. Archives: ED2009-183 MW2009-166 |
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| Conference Information | |
| Committee | ED MW |
| Conference Date | 2010-01-13 - 2010-01-15 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-01-ED-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaN/GaN HEMT having periodic mesa-gate structure |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | High Electron Mobility Transistor(HEMT) |
| Keyword(4) | Multi-Mesa-Channel structure |
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| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Kota Ohi |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Tamotsu Hashizume |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-01-14 10:50:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-183, MW2009-166 |
| Volume (vol) | vol.109 |
| Number (no) | no.360(ED), no.361(MW) |
| Page | pp.49-53 |
| #Pages | 5 |
| Date of Issue | 2010-01-06 (ED, MW) |
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