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| Presentation | 2010-01-12 16:05 Analysis of Trap-State Density at Pentacene/Gate Insulator Interface Using In-Situ Field-Effect Thermally-Stimulated-Current Method Takahiro Fujii (Chiba Univ.), Hiroyuki Matsui (AIST), Tatsuo Hasegawa (AIST/Univ. of Tokyo), Shigekazu Kuniyoshi, Masatoshi Sakai, Kazuhiro Kudo, Masakazu Nakamura (Chiba Univ.)  OME2009-76 Link to ES Tech. Rep. Archives: OME2009-76 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Trap states at organic/gate insulator interfaces in organic thin-film transistors (OTFTs) greatly influence on the characteristics and stability of OTFTs. We have been quantitatively studying the density of interface trap states using an originally developed instrument for in-situ field-effect thermally-stimulated-current (FE-TSC) method which enables us to characterize the trap states without exposing the sample to the air. By this instrument, the density of trap states at pure pentacene/gate insulator interface has been estimated. The results indicated the existence of an isolated trap state at 70-100 meV above pentacene-HOMO-edge, of which energy was insensitive to the chemical structure of the gate insulator surface. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | pentacene / organic thin-film transistor / interface trap state / thermally stimulated current method / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 359, OME2009-76, pp. 51-56, Jan. 2010. | |
| Paper # | OME2009-76 | |
| Date of Issue | 2010-01-05 (OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | OME2009-76 Link to ES Tech. Rep. Archives: OME2009-76 |
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| Conference Information | |
| Committee | OME |
| Conference Date | 2010-01-12 - 2010-01-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Sensor, device, etc. |
| Paper Information | |
| Registration To | OME |
| Conference Code | 2010-01-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Trap-State Density at Pentacene/Gate Insulator Interface Using In-Situ Field-Effect Thermally-Stimulated-Current Method |
| Sub Title (in English) | |
| Keyword(1) | pentacene |
| Keyword(2) | organic thin-film transistor |
| Keyword(3) | interface trap state |
| Keyword(4) | thermally stimulated current method |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takahiro Fujii |
| 1st Author's Affiliation | Chiba University (Chiba Univ.) |
| 2nd Author's Name | Hiroyuki Matsui |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Tatsuo Hasegawa |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology/University of Tokyo (AIST/Univ. of Tokyo) |
| 4th Author's Name | Shigekazu Kuniyoshi |
| 4th Author's Affiliation | Chiba University (Chiba Univ.) |
| 5th Author's Name | Masatoshi Sakai |
| 5th Author's Affiliation | Chiba University (Chiba Univ.) |
| 6th Author's Name | Kazuhiro Kudo |
| 6th Author's Affiliation | Chiba University (Chiba Univ.) |
| 7th Author's Name | Masakazu Nakamura |
| 7th Author's Affiliation | Chiba University (Chiba Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-01-12 16:05:00 |
| Presentation Time | 25 minutes |
| Registration for | OME |
| Paper # | OME2009-76 |
| Volume (vol) | vol.109 |
| Number (no) | no.359 |
| Page | pp.51-56 |
| #Pages | 6 |
| Date of Issue | 2010-01-05 (OME) |
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