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Paper Abstract and Keywords
Presentation 2009-12-11 14:40
AlGaInAs semi-insulating buried-heterostructure (SI-BH) distributed-reflector (DR) lasers for low-driving-current 40-Gbps direct modulation
Ayahito Uetake, Koji Otsubo, Manabu Matsuda (OITDA/Fujitsu/Fujitsu Laboratories), Shigekazu Okumura (Fujitsu Laboratories), Mitsuru Ekawa, Tsuyoshi Yamamoto (OITDA/Fujitsu/Fujitsu Laboratories) LQE2009-148 Link to ES Tech. Rep. Archives: LQE2009-148
Abstract (in Japanese) (See Japanese page) 
(in English) Because of recent significant increase of data traffic, much attention has been paid to high-speed optical transmitters. In order to realize high-speed directly modulated lasers with low driving current, we have investigated AlGaInAs-based multiple-quantum-well (MQW) lasers combined with semi-insulating buried-heterostructure (SI-BH).
In this paper, we report 1.3-μm and 1.55-μm AlGaInAs-MQW SI-BH distributed reflector (DR) lasers with passive reflectors on both sides of very short active region. We successfully achieved very high slope values of relaxation oscillation frequency (fr) and realized 40-Gbps direct modulation with low driving-current.
Keyword (in Japanese) (See Japanese page) 
(in English) 1.3-µm / 1.55-μm / AlGaInAs multiple-quantum-well / semi-insulating buried-heterostructure / directly-modulated lasers / 40-Gbps / relaxation oscillation frequency /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 331, LQE2009-148, pp. 51-56, Dec. 2009.
Paper # LQE2009-148 
Date of Issue 2009-12-04 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF LQE2009-148 Link to ES Tech. Rep. Archives: LQE2009-148

Conference Information
Committee LQE  
Conference Date 2009-12-11 - 2009-12-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2009-12-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) AlGaInAs semi-insulating buried-heterostructure (SI-BH) distributed-reflector (DR) lasers for low-driving-current 40-Gbps direct modulation 
Sub Title (in English)  
Keyword(1) 1.3-µm  
Keyword(2) 1.55-μm  
Keyword(3) AlGaInAs multiple-quantum-well  
Keyword(4) semi-insulating buried-heterostructure  
Keyword(5) directly-modulated lasers  
Keyword(6) 40-Gbps  
Keyword(7) relaxation oscillation frequency  
Keyword(8)  
1st Author's Name Ayahito Uetake  
1st Author's Affiliation Optoelectronic Industry and Technology Development Association/ Fujitsu Ltd./ Fujitsu Laboratories Ltd. (OITDA/Fujitsu/Fujitsu Laboratories)
2nd Author's Name Koji Otsubo  
2nd Author's Affiliation Optoelectronic Industry and Technology Development Association/ Fujitsu Ltd./ Fujitsu Laboratories Ltd. (OITDA/Fujitsu/Fujitsu Laboratories)
3rd Author's Name Manabu Matsuda  
3rd Author's Affiliation Optoelectronic Industry and Technology Development Association/ Fujitsu Ltd./ Fujitsu Laboratories Ltd. (OITDA/Fujitsu/Fujitsu Laboratories)
4th Author's Name Shigekazu Okumura  
4th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Laboratories)
5th Author's Name Mitsuru Ekawa  
5th Author's Affiliation Optoelectronic Industry and Technology Development Association/ Fujitsu Ltd./ Fujitsu Laboratories Ltd. (OITDA/Fujitsu/Fujitsu Laboratories)
6th Author's Name Tsuyoshi Yamamoto  
6th Author's Affiliation Optoelectronic Industry and Technology Development Association/ Fujitsu Ltd./ Fujitsu Laboratories Ltd. (OITDA/Fujitsu/Fujitsu Laboratories)
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Speaker Author-1 
Date Time 2009-12-11 14:40:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2009-148 
Volume (vol) vol.109 
Number (no) no.331 
Page pp.51-56 
#Pages
Date of Issue 2009-12-04 (LQE) 


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