Paper Abstract and Keywords |
Presentation |
2009-12-11 14:40
AlGaInAs semi-insulating buried-heterostructure (SI-BH) distributed-reflector (DR) lasers for low-driving-current 40-Gbps direct modulation Ayahito Uetake, Koji Otsubo, Manabu Matsuda (OITDA/Fujitsu/Fujitsu Laboratories), Shigekazu Okumura (Fujitsu Laboratories), Mitsuru Ekawa, Tsuyoshi Yamamoto (OITDA/Fujitsu/Fujitsu Laboratories) LQE2009-148 Link to ES Tech. Rep. Archives: LQE2009-148 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Because of recent significant increase of data traffic, much attention has been paid to high-speed optical transmitters. In order to realize high-speed directly modulated lasers with low driving current, we have investigated AlGaInAs-based multiple-quantum-well (MQW) lasers combined with semi-insulating buried-heterostructure (SI-BH).
In this paper, we report 1.3-μm and 1.55-μm AlGaInAs-MQW SI-BH distributed reflector (DR) lasers with passive reflectors on both sides of very short active region. We successfully achieved very high slope values of relaxation oscillation frequency (fr) and realized 40-Gbps direct modulation with low driving-current. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
1.3-µm / 1.55-μm / AlGaInAs multiple-quantum-well / semi-insulating buried-heterostructure / directly-modulated lasers / 40-Gbps / relaxation oscillation frequency / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 331, LQE2009-148, pp. 51-56, Dec. 2009. |
Paper # |
LQE2009-148 |
Date of Issue |
2009-12-04 (LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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LQE2009-148 Link to ES Tech. Rep. Archives: LQE2009-148 |