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Presentation 2009-12-11 11:00
Relationship between Facet Stress and Reliability of Edge-Emitting AlGaInAs Laser Diodes
Hiroyuki Ichikawa, Akiko Kumagai, Naoya Kono, Shinji Matsukawa, Chie Fukuda, Keiko Iwai, Nobuyuki Ikoma (Sumitomo Electric Industries, Ltd.) LQE2009-142 Link to ES Tech. Rep. Archives: LQE2009-142
Abstract (in Japanese) (See Japanese page) 
(in English) Although facet stress is one of the important parameters in edge-emitting laser diodes (LDs), the relationship between facet stress and reliability in AlGaInAs edge-emitting LDs has been unclear. Thus, we prepared two types of LDs which difference is stress-direction at the facet. We carried out three types of reliability tests: forward-biased electrostatic discharge (ESD) tests, long-tern reliability tests, and accelerated aging tests. In ESD tests, cumulative degradation ratio of compressive-stress was 33% lower than that of tensile-stress. This effect was obtained by decrease in optical absorption. In long-term aging tests of 85deg 8mW 5000h, degradation did not occur. In accelerated aging tests of 85deg 200mA 800h, degradation occurred only for tensile-stress. This degradation mechanism was different from that due to optical absorption. Although degradation mechanism has been unclear, we found that this degradation is dependent on stress-direction at the facet.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaInAs / Laser / Stress / Reliability / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 331, LQE2009-142, pp. 19-23, Dec. 2009.
Paper # LQE2009-142 
Date of Issue 2009-12-04 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF LQE2009-142 Link to ES Tech. Rep. Archives: LQE2009-142

Conference Information
Committee LQE  
Conference Date 2009-12-11 - 2009-12-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2009-12-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Relationship between Facet Stress and Reliability of Edge-Emitting AlGaInAs Laser Diodes 
Sub Title (in English)  
Keyword(1) AlGaInAs  
Keyword(2) Laser  
Keyword(3) Stress  
Keyword(4) Reliability  
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1st Author's Name Hiroyuki Ichikawa  
1st Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric Industries, Ltd.)
2nd Author's Name Akiko Kumagai  
2nd Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric Industries, Ltd.)
3rd Author's Name Naoya Kono  
3rd Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric Industries, Ltd.)
4th Author's Name Shinji Matsukawa  
4th Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric Industries, Ltd.)
5th Author's Name Chie Fukuda  
5th Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric Industries, Ltd.)
6th Author's Name Keiko Iwai  
6th Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric Industries, Ltd.)
7th Author's Name Nobuyuki Ikoma  
7th Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric Industries, Ltd.)
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Speaker Author-1 
Date Time 2009-12-11 11:00:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2009-142 
Volume (vol) vol.109 
Number (no) no.331 
Page pp.19-23 
#Pages
Date of Issue 2009-12-04 (LQE) 


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